| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
E28F400B5B80 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 |   | |
E28F400B5B80 | 5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
5 VOLT BOOT BLOCK FLASH MEMORY SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | | ||
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex | INTEL 英特尔 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
23+ |
NA |
2500 |
全新原装假一赔十 |
|||
INTEL |
24+ |
TSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INTEL/英特尔 |
26+ |
TSSOP48 |
20000 |
公司只有正品,实单来谈 |
|||
INTEL |
2026+ |
TSSOP48 |
24 |
原装正品 假一罚十! |
|||
INTER |
23+ |
TSSOP |
1000 |
||||
INTEL/英特尔 |
25+ |
TSOP48 |
2059 |
全新原装正品支持含税 |
|||
INTEL |
20+ |
TSOP-48 |
2960 |
诚信交易大量库存现货 |
|||
INTEL/英特尔 |
23+ |
TSSOP48 |
98900 |
原厂原装正品现货!! |
|||
INTEL/英特尔 |
25+ |
TSSOP48 |
18000 |
原装正品,全新来谈 |
|||
INTEL |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
E28F400B5B80规格书下载地址
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E28F400B5B80数据表相关新闻
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E2AM12LS04M1B1
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E2A-S12KS04-WP-B12M
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-8-14E211ATF-缓冲器/驱动器...
描述 该Edge211是一个双三元司机在制造 电压CMOS全过程。它是专为自动 测试设备和仪器在成本，功能 密度和电源都处于溢价。 每个tristatable驱动程序是能够产生3个级别- 一为逻辑高，为逻辑低之一，对于任何一 终止电压或特殊的编程电压。 该Edge211的目的是提供一个极低的泄漏， 低成本，低功耗，小封装，驱动解决方案 100兆赫及以下针电子应用。 特点 •100 MHz运行 •12V的
2013-3-5
DdatasheetPDF页码索引
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