HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET™ Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance •

HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Package • miniBLOC with Aluminum Nitride Isolation • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • Easy

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 12.5Ω(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

Solder-Bond Technology

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Power MOSFET

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