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E178

Engineering Catalog 169

T-3¼ Jumbo LEDs (10mm) E186, E176, E179, E177, E178 T-3¼ Jumbo, Bi-Color LED (10mm) E187, E188, E189 T-3¼ Jumbo, Flashing LEDs (10mm) E162, E163, E164

GILWAY

E178

T-3 1/4 Jumbo LEDs (10mm)

T-3¼ Jumbo LEDs (10mm) E186, E176, E179, E177, E178 T-3¼ Jumbo, Bi-Color LED (10mm) E187, E188, E189 T-3¼ Jumbo, Flashing LEDs (10mm) E162, E163, E164

GILWAY

封装/外壳:TO-200AF 包装:卷带(TR) 描述:DIODE GEN PURP 3.6KV 1780A - 分立半导体产品 二极管 - 整流器 - 单

IXYS

艾赛斯

HP Sonic FRD

LITTELFUSE

力特

High Power Sonic FRD

文件:646.49 Kbytes Page:10 Pages

IXYS

艾赛斯

VHF variable capacitance diode

DESCRIPTION The BB178 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Ultra small plastic

PHILIPS

飞利浦

PNP SILICON TRANSISTORS

PNP Silicon Transistors BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input driver stages.

SIEMENS

西门子

PNP SILICON TRANSISTORS

PNP Silicon Transistors BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use in AF input driver stages.

SIEMENS

西门子

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

PANASONIC

松下

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

E178产品属性

  • 类型

    描述

  • Package Type:

    W125

  • Maximum Repetitive Blocking Voltage [Diode] (V):

    6500

  • Average Continuous Current Rating @ TK = 55 ℃ [Diode] (A):

    1780

  • Maximum Surge Current - 10ms Half Sine Wave [Diode] (A):

    25600

  • I2t [Diode] (A2s):

    3.29 x 10⁶

  • Max Reverse Recovery Current:

    1750

  • Typical Reverse Recovery Time (µs):

    1.22

  • Reverse Recovery Charge (µC):

    3500

  • Threshold Voltage (V):

    2.021

  • Slope Resistance (mOhm):

    0.983

  • Thermal resistance [junction-heat sink] 180° Sine Wave (K/W):

    0.0077

  • Sample Request:

    No

更新时间:2026-7-23 10:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
76000
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