Low Forward Voltage drop Diode

Construction: Diffusion-type Silicon Diode Application : High Frequency Rectification

20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ◆ Low forward voltage drop ◆ ThinkiSemi mesa technology with high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,Motor Control,SMPS and UPS ◆ Car Audi

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE16P40Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -40V,ID = -15A RDS(ON)

20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

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P-Channel Enhancement Mode MOSFET

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