| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar | STMICROELECTRONICS 意法半导体 |   | ||
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar | STMICROELECTRONICS 意法半导体 | | ||
N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET 文件：467.13 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
TO-220FP |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Sage |
24+ |
模块 |
400 |
||||
ST |
24+ |
TO220 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
23+ |
TO220 |
6996 |
只做原装正品现货 |
|||
ST/意法 |
15+ |
TO-220F |
364 |
只做原装正品 |
|||
SAMHOP |
20+ |
TO220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ST(意法) |
25+ |
TO-220FP |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
YOSONIC |
23+ |
SMD |
66600 |
专业芯片配单原装正品假一罚十 |
|||
ST |
25+ |
TO-220F |
18000 |
只做原装 有挂有货 假一赔十 |
|||
ST |
13+ |
TO220F |
2000 |
全新原装 可出样品 |
E11NM80芯片相关品牌
E11NM80规格书下载地址
E11NM80参数引脚图相关
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- E1215XD
- E1215H
- E1215
- E1212XT
- E1212XS
- E1212XD
- E120G-M
- E120F-M
- E120E-M
- E120D-1
- E120B-1
- E1209XS
- E1209XD
- E1205XT
- E1205XS
- E1205XD
- E-1200
- E1200
- E11W2
- E11W1C1B-155.520MTR
- E11W1C1B-155.520M
- E11W1C1A-155520MTR
- E11W1C1A-155520M
- E11W1C1A-155.520MTR
- E11W1C1A-155.520M
- E11W1
- E11u/EMIF11-10002C4
- E11U
- E11-TSOPA-48
- E11SJ
- E11ROEB
- E11-PSOPA-W
- E11-PSOPA-52
- E11-PSOPA-29
- E11PM2.2-7
- E11PM2.2-4
- E11PM0.8-7
- E11PKG
- E11NM8D
- E11M
- E11J2H2D-155520MTR
- E11J2H2D-155520M
- E11J2H2D-155.520MTR
- E11J2H2D-155.520M
- E11J2H2C-155520MTR
- E11J2H2C-155520M
- E11J2H2C-155.520MTR
- E11J2H2C-155.520M
- E11J2H2B-155520MTR
- E11J2H2B-155520M
- E11J2H2B-155.520MTR
- E11J2H2B-155.520M
- E11J2H2A-155520MTR
- E11J2H2A-155520M
- E11J2H2A-155.520MTR
- E11J2H2A-155.520M
- E11J2H1D-155520MTR
- E11J2H1D-155520M
- E11J2H1D-155.520MTR
- E11J2
- E11J1
- E11F4
- E11-CL
- E11C2
- E11C1
- E119A
- E118AHF
- E116A
- E1168
- E115I
- E-1150
- E114I
- E114EI
- E114E
- E113I
- E113EI
- E113E
- E112I
- E112EI
E11NM80数据表相关新闻
E220-400M22S 是亿佰特（EBYTE）推出的一款工作于400MHz 频段的 LoRa 无线通信模块，基于 Semtech LoRa 技术设计，聚焦远距离传输、低功耗、强抗干扰特性，适用于工业物联网、智能农业、智慧城市等场景。
E220-400M22S 亿佰特（EBYTE）
2025-11-4E22-400T30S 是由亿佰特（EBYTE）推出的一款基于LoRa 扩频技术的无线通信模块，工作于400MHz 频段，主打远距离传输、低功耗、强抗干扰特性，适用于物联网（IoT）、远程数据采集、工业控制等场景。
E22-400T30S 是亿佰特（EBYTE） 800000PCS
2025-11-4E101SD1CBE
E101SD1CBE
2021-11-16E104-035R
E104-035R ，全新原装当天发货或门市自取0755-82732291.
2019-11-26E07040K0A全新原装现货
可立即发货
2019-9-24E211ATF-缓冲器/驱动器...
描述 该Edge211是一个双三元司机在制造 电压CMOS全过程。它是专为自动 测试设备和仪器在成本，功能 密度和电源都处于溢价。 每个tristatable驱动程序是能够产生3个级别- 一为逻辑高，为逻辑低之一，对于任何一 终止电压或特殊的编程电压。 该Edge211的目的是提供一个极低的泄漏， 低成本，低功耗，小封装，驱动解决方案 100兆赫及以下针电子应用。 特点 •100 MHz运行 •12V的
2013-3-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
