The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Full 1200V Capability

■ 800A Per Arm

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems