Features

LD-MOS Technology with the Lowest Figure of Merit:

RDS(ON) = 85mΩ to Minimize On-State Losses

Qg = 3.7nC for Ultra-Fast Switching

VGS(TH) = -0.6V Typ. for a Low Turn-On Potential

CSP with Footprint 1.0mm × 1.0mm

Height = 0.62mm for Low Profile

ESD = 3kV HBM Protection of Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

Applications

Battery managements

Load switches

Battery protections