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DS1249AB-100中文资料
DS1249AB-100数据手册规格书PDF详情
DESCRIPTION
The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
▪ 10 years minimum data retention in the absence of external power
▪ Data is automatically protected during power loss
▪ Unlimited write cycles
▪ Low-power CMOS operation
▪ Read and write access times as fast as 70 ns
▪ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
▪ Full ±=10 VCC operating range (DS1249Y)
▪ Optional ±=5 VCC operating range (DS1249AB)
▪ Optional industrial temperature range of -40°C to +85°C, designated IND
▪ JEDEC standard 32-pin DIP package
DS1249AB-100产品属性
- 类型
描述
- 型号
DS1249AB-100
- 功能描述
NVRAM 2048K NV SRAM
- RoHS
否
- 制造商
Maxim Integrated
- 数据总线宽度
8 bit
- 存储容量
1024 Kbit
- 组织
128 K x 8
- 接口类型
Parallel
- 访问时间
70 ns
- 电源电压-最大
5.5 V
- 电源电压-最小
4.5 V
- 工作电流
85 mA
- 最大工作温度
+ 70 C
- 最小工作温度
0 C
- 封装/箱体
EDIP
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
2021+ |
DIP |
6800 |
原厂原装,欢迎咨询 |
|||
DALLAS |
2025+ |
DIP |
5000 |
原装进口价格优 请找坤融电子! |
|||
DALLAS |
24+ |
DIP |
9860 |
一级代理/放心购买 |
|||
DALLAS |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DALLAS |
24+ |
DIP |
13718 |
只做原装 公司现货库存 |
|||
DALLAS |
24+ |
DIP |
12000 |
原装正品 有挂就有货 |
|||
DALLAS |
25+ |
DIP |
23 |
原装正品,假一罚十! |
|||
DALLAS |
25+ |
NA |
9 |
全新原装正品支持含税 |
|||
DALLAS |
26+ |
原厂封装 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
DALLAS |
23+ |
DIP |
98900 |
原厂原装正品现货!! |
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DALLAS相关芯片制造商
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