TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

ZENER DIODES

• 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN,JANTX AND JANTXV PER MIL-PRF-19500/117 • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

NPN Epitaxial Silicon Transistor

For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage

Linear Integrated Circuit Voltage Regulator, Negative, -8V, 1A

Description: The NTE965 voltage regulator employs current limiting, thermal shutdown, and safe–area compensation which makes it remarkably rugged under most operating conditions. With adequate heat–sinking they can deliver output currents in excess of 1.0 amperes. Features: ● No External Compon

Window Discriminator

Features ●Two window settings – direct setting of lower and upper edge voltage (window edges) – indirect setting by window center voltage and half window width ●Adjustable hysteresis ●Digital outputs with open collectors for currents up to 50 mA ●Adjustable reference voltageVStab

Window Discriminator

Features ●Two window settings – direct setting of lower and upper edge voltage (window edges) – indirect setting by window center voltage and half window width ●Adjustable hysteresis ●Digital outputs with open collectors for currents up to 50 mA ●Adjustable reference voltageVStab