| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DU2880 | RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices | MACOM |   | |
DU2880 | RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices | MACOM | | |
DU2880 | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | MACOM | | |
1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V ·N-Channel Enhancement Mode Device\n·Lower Noise Figure than Bipolar Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure; | MACOM | | ||
RF Power MOSFET Transistor 80W, 2-175MHz, 28V Features • N- channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant | MA-COM | | ||
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices | MACOM | | ||
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices | MACOM | | ||
RF Power MOSFET Transistor 80W, 2-175MHz, 28V ·N-Channel Enhancement Mode Device\n·High Saturate Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure; | MACOM | | ||
RF Power MOSFET Transistor 80W, 2-175MHz, 28V Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant | MA-COM | | ||
RF Power MOSFET Transistor 80W, 2-175MHz, 28V Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant | MA-COM | | ||
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices | MACOM | | ||
RF Power MOSFET Transistor 文件：145.98 Kbytes Page：3 Pages | MA-COM | | ||
RF Power MOSFET Transistor 文件：609.78 Kbytes Page：4 Pages | MA-COM | | ||
RF Power MOSFET Transistor 文件：156.2 Kbytes Page：3 Pages | MA-COM | | ||
RF Power MOSFET Transistor 文件：628.93 Kbytes Page：4 Pages | MA-COM | | ||
RF Power MOSFET Transistor 文件：154.09 Kbytes Page：3 Pages | MA-COM | | ||
RF Power MOSFET Transistor 文件：621.38 Kbytes Page：4 Pages | MA-COM | | ||
Pentium Pro Controller 文件：337.81 Kbytes Page：8 Pages | TI 德州仪器 | |
DU2880产品属性
- 类型
描述
- Min Frequency(MHz)：
2
- Max Frequency(MHz)：
175
- Bias Voltage(V)：
28.0
- Pout(W)：
80.00
- Gain(dB)：
13.00
- Efficiency(%)：
60
- Type：
DMOS
- Package：
Flange Ceramic Pkg
- Package Category：
Ceramic Flange Mount
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
03+ |
TO-57 |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MACOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
M/A-COM |
24+ |
N/A |
5000 |
全新原装正品,现货销售 |
|||
M/A-COM |
24+ |
N/A |
8000 |
新到现货，只做全新原装正品 |
|||
M/A-COM |
24+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CHRNIX |
24+ |
3 |
|||||
M/A-COM |
23+ |
NA |
13966 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
M/A-COM |
22+ |
NA |
12800 |
只做原装,价格优惠,长期供货。 |
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DU2880规格书下载地址
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DU2880数据表相关新闻
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2019-3-7
DdatasheetPDF页码索引
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