RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz

RF Power MOSFET Transistor 80W, 2-175MHz, 28V

Features • N- channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor 80W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor 80W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant

RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor

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1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V

RF Power MOSFET Transistor

文件：609.78 Kbytes Page：4 Pages

RF Power MOSFET Transistor

文件：156.2 Kbytes Page：3 Pages

RF Power MOSFET Transistor 80W, 2-175MHz, 28V

RF Power MOSFET Transistor

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RF Power MOSFET Transistor

文件：154.09 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：621.38 Kbytes Page：4 Pages

Round Aluminum Through Hole Spacer

Description Round Aluminum Through - Hole Spacer

3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier

GENERAL DESCRIPTION The ADN2880 is a 3.3 V, high gain SiGe transimpedance amplifier (TIA). The TIA converts the small signal current of a photo detector into differential voltage output. The ADN2880 features a 315 nA typical input-referred noise, enabling an optical sensitivity of −24.2 dBm (0.85

3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier

GENERAL DESCRIPTION The ADN2880 is a 3.3 V, high gain SiGe transimpedance amplifier (TIA). The TIA converts the small signal current of a photo detector into differential voltage output. The ADN2880 features a 315 nA typical input-referred noise, enabling an optical sensitivity of −24.2 dBm (0.85

2-pin JST SM Plug Receptacle Cable Set

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140 MHz Center Frequency

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