RF MOSFET Power Transistor, 4OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices

RF Power MOSFET Transistor 40W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

RF Power MOSFET Transistor 40W, 2-175MHz, 28V

·N-Channel enhancement mode device\n·Lower noise figure than bipolar devices\n·High saturated output power\n·Lower capacitances for broadband operation\n·DMOS structure;

RF Power MOSFET Transistor

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RF Power MOSFET Transistor

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600MHz, Very High Slew Rate Operational Amplifier

600MHz, Very High Slew Rate Operational Amplifier The HA-2840 is a wideband, very high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with a closed l

4A Low Dropout Voltage Regulator Adjustable & Fixed 3.3V

PRODUCT DESCRIPTION The SPX2840 is a low power 4A Adjustable Voltage Regulator that is very easy to use. It requires only 2 external resistors to set the output voltage. This device is an excellent choice for use in Powering Intel Microprocessor to convert from +5V to 3.3V supplies and as a post

4A Low Dropout Voltage Regulator Adjustable & Fixed 3.3V

PRODUCT DESCRIPTION The SPX2840 is a low power 4A Adjustable Voltage Regulator that is very easy to use. It requires only 2 external resistors to set the output voltage. This device is an excellent choice for use in Powering Intel Microprocessor to convert from +5V to 3.3V supplies and as a post

RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices