RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances For Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices

RF Power MOSFET Transistor 200W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

RF Power MOSFET Transistor

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RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances For Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices

RF Power MOSFET Transistor

文件：632.08 Kbytes Page：4 Pages

3.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 90A Peak • Low Reverse Leakage Current

Smooth, high torque, roller ratchet handle

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