RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

RF Power MOSFET Transistor 15W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

RF Power MOSFET Transistor

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RF Power MOSFET Transistor 15W, 2-175MHz, 12V

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STM

17 x 2 Duplex Driver with Dimming, Keyscan and A/D Converter Function

GENERAL DESCRIPTION The MSC1215-xx is a 1/2-duty vacuum fluorescent display tube driver implemented in BiCMOS technology. This LSI consists of a 37-bit shift register, 34 latches, an analog dimming circuit, (a PWM conversion circuit), a 3·4 keyscan circuit, a 6ch-6-bit A/D converter and 17 segmen

SCR

DESCRIPTION The TN1215 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to 400Hz on resistive or inductiveload. FEATURES ■ HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND R

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Photo Interrupter

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