丝印代码：E07；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

Ultra fast low-loss rectifier

DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low lea

Silicon MOS IC

Silicon NPN Transistor Horizontal Deflection

Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V • Switching Times With Inductive Loads:

Silicon NPN Phototransistor

For optical control systems Features • High sensitivity • Fast response : tr = 4 µs (typ.) • Adoption of visible light cutoff resin • Ultraminiature, thin side-view type package

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE