DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

丝印代码：T146；Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

丝印代码：TP；Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

Digital transistors (built-in resistor)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT） 描述：TRANS PREBIAS NPN 200MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

丝印代码：C363ES；Digital transistors (built-in resistors)

文件：105.46 Kbytes Page：4 Pages

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages