Bias Resistor Transistor NPN Silicon

Bias Resistor Transistor NPN Silicon P/b Lead(P/b)-Free

丝印代码：45；DTA/DTC SERIES

Digital transistors (built-in resistors)

BIAS RESISTOR TRANSISTORS NPN SILICON SURFACE MOUNT TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK

DESCRIPTION This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter r

Digital transistor(with built-in resistors)

罗姆开发了数字晶体管的标准产品。 •标准的数字晶体管;

丝印代码：45；100mA / 50V Digital transistors (with built-in resistors)

文件：147.58 Kbytes Page：3 Pages

NPN 100mA 50V Digital Transistor

文件：1.50786 Mbytes Page：11 Pages

100mA / 50V Digital transistors (with built-in resistors)

文件：101.22 Kbytes Page：3 Pages

丝印代码：45；Digital transistors (built-in resistors)

文件：66.72 Kbytes Page：4 Pages

Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolith

Digital transistor(with built-in resistors) (支持 AEC-Q101)

车载数字晶体管\n\n与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。 •标准的数字晶体管;

丝印代码：N18；Digital Transistor

Features - Epitaxial planar die construction. - Built-in biasing resistors, R1≠R2.

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1) Built-In Biasing Resistors, 　 R1 = 22kΩ, R2 = 47kΩ 2) Built-in bias resistors enable the configuration of 　an inverter circuit without connecting external 　input resistors (see inner circuit) . 3) Only the on/off conditions need to be set 　for operation, making the circuit desi

Digital Transistors (BRT)

文件：134.46 Kbytes Page：11 Pages

Digital Transistors (BRT) R1 = 22 k, R2 = 47 k

文件：143.79 Kbytes Page：11 Pages

Digital Transistors (BRT) R1 = 22 k, R2 = 47 k

文件：135.9 Kbytes Page：10 Pages

Digital Transistors (BRT) R1 = 22 k, R2 = 47 k

文件：135.9 Kbytes Page：10 Pages

Digital Transistors (BRT)

文件：134.46 Kbytes Page：11 Pages

Digital Transistors (BRT) R1 = 22 k, R2 = 47 k

文件：143.79 Kbytes Page：11 Pages

Digital Transistors

文件：133.81 Kbytes Page：11 Pages

NPN 100mA 50V Digital Transistor

文件：893.45 Kbytes Page：8 Pages

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN DIGITAL TRANSISTOR (CORRESPO 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Digital Transistor

封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 150MW VMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

丝印代码：-05；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space