NPN Small Signal Transistor Small Signal Diode

Small Signal Diode Features ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). ◇ The bias resistors consist of thin -film resistors with complete isolation to allow negative biasing of the input. They al

丝印代码：TP；Digital transistors (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be negatively biased. The insulation also el

Digital transistors (built-in resistors)

DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the in

Digital Transistors NPN (Built-in Resistors)

FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors consis of thin-film resistors with c

Digital Transistor

NPN Digital Transistors (Built-in Resistors)

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丝印代码：C113Z-XXX；DIGITAL TRANSISTOR (NPN)

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数字晶体管

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages