丝印代码：E21；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1) Built-In Biasing Resistors, 　　 R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of 　an inverter circuit without connecting external 　input resistors (see inner circuit) . 3) Only the on/off conditions need to be set 　for operation, making the circuit desi

NPN 100mA 50V 数字晶体管（电阻内置型晶体管）

• 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ\n• 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).\n• 3) Only the on/off conditions need to be set for operation, making the circuit design easy.\n• 4) Com;

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN 100MA 50V DIGITAL TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages