Digital transistors (built-in resistors)

DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the in

Digital Transistors NPN (Built-in Resistors)

FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors consis of thin-film resistors with c

Digital Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epitaxial Planar Die Construction • Complementary NPN Types Available • Built-In Biasing Resistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:

Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP types available(DTA). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The NPN style digital transistor.

NPN Small Signal Transistor Small Signal Diode

Small Signal Diode Features ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). ◇ The bias resistors consist of thin -film resistors with complete isolation to allow negative biasing of the input. They al

NPN 100mA 50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4

丝印代码：E21；Digital Transistor

Features - Epitaxial planar die construction. - Built-in biasing resistors, R1≠R2.

Digital Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epitaxial Planar Die Construction • Complementary NPN Types Available • Built-In Biasing Resistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:

Digital Transistors

文件：391.68 Kbytes Page：3 Pages

丝印代码：E21；DIGITAL TRANSISTOR (NPN)

文件：1.0211 Mbytes Page：16 Pages

Digital Transistors

文件：431.73 Kbytes Page：3 Pages

SOT-23 DIGITAL TRANSISTORS TRANSISTORS(NPN)

文件：366.67 Kbytes Page：3 Pages

数字三极管

数字晶体管

数字晶体管

Digital Transistors

文件：391.68 Kbytes Page：3 Pages

Digital Transistors

文件：431.73 Kbytes Page：3 Pages

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：900.9 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN 100MA 50V DIGITAL TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN 100MA 50V DIGITAL TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages