NPN 双极数字晶体管 (BRT)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant;

Digital Transistors (BRT) R1 = 1 kOhm, R2 = 1 kOhn

Digital Transistors (BRT) R1 = 1 kΩ, R2 = 1 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic

NPN Bipolar Digital Transistor (BRT)

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant;

Digital Transistors (BRT) R1 = 1 kOhm, R2 = 1 kOhn

Digital Transistors (BRT) R1 = 1 kΩ, R2 = 1 kΩ NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic

Digital Transistors (BRT) R1 = 1 k, R2 = 1 k

文件：105.42 Kbytes Page：12 Pages

Digital Transistors (BRT)

文件：134.23 Kbytes Page：11 Pages

Digital Transistors (BRT) R1 = 1 k, R2 = 1 k

文件：105.42 Kbytes Page：12 Pages

Digital Transistors (BRT)

文件：134.23 Kbytes Page：11 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V 100MA SC75 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

500mA/50V Digital transistor

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500mA/50V Digital transistor

Digital Transistors (BRT) R1 = 1 k, R2 = 1 k

文件：105.42 Kbytes Page：12 Pages

Digital Transistors (BRT)

文件：134.23 Kbytes Page：11 Pages

Digital Transistors (BRT) R1 = 1 k, R2 = 1 k

文件：105.42 Kbytes Page：12 Pages

Digital Transistors (BRT)

文件：134.23 Kbytes Page：11 Pages

封装/外壳：SOT-723 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V SOT723 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages