-500mA/ -50V 数字晶体管（电阻内置型晶体管）

DTB113EC是电阻内置型晶体管。偏置用电阻由薄膜电阻构成，由于采用完全绝缘，可将输入向正方向偏置。还有几乎不产生寄生效应的优点。 • 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit)\n• biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.\n• 3)Only the on/off conditions need to be set f;

Digital Transistor

-500mA/-50V Digital transistor

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-500mA/ -50V 数字晶体管（电阻内置型晶体管）

DTB113ECHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit)\n• biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.\n• Complementary NPN Types: DTD113EC HZG;

-500mA/-50V Digital transistor (with built-in resistors)

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DTB113ECHZG IS THE HIGH RELIABIL 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PNP -500MA/-50V DIGITAL TRANSIST 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages