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DTA115E晶体管资料
DTA115E(A,F,L,S,V)别名:DTA115E(A,F,L,S,V)三极管、DTA115E(A,F,L,S,V)晶体管、DTA115E(A,F,L,S,V)晶体三极管
DTA115E(A,F,L,S,V)生产厂家:
DTA115E(A,F,L,S,V)制作材料:Si-P+R
DTA115E(A,F,L,S,V)性质:开关管 (S)
DTA115E(A,F,L,S,V)封装形式:直插封装
DTA115E(A,F,L,S,V)极限工作电压:50V
DTA115E(A,F,L,S,V)最大电流允许值:0.02A
DTA115E(A,F,L,S,V)最大工作频率:<1MHZ或未知
DTA115E(A,F,L,S,V)引脚数:3
DTA115E(A,F,L,S,V)最大耗散功率:0.3W
DTA115E(A,F,L,S,V)放大倍数:
DTA115E(A,F,L,S,V)图片代号:A-68
DTA115E(A,F,L,S,V)vtest:50
DTA115E(A,F,L,S,V)htest:999900
- DTA115E(A,F,L,S,V)atest:0.02
DTA115E(A,F,L,S,V)wtest:0.3
DTA115E(A,F,L,S,V)代换 DTA115E(A,F,L,S,V)用什么型号代替:
DTA115E价格
参考价格:¥0.0946
型号:DTA115EET1G 品牌:ON 备注:这里有DTA115E多少钱,2025年最近7天走势,今日出价,今日竞价,DTA115E批发/采购报价,DTA115E行情走势销售排行榜,DTA115E报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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DTA115E | PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advan | UTC 友顺 | ||
DTA115E | DIGITAL TRANSISTOR Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e | ROHM 罗姆 | ||
DTA115E | PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | ||
DTA115E | Digital Transistor | UTC 友顺 | ||
Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are | ROHM 罗姆 | |||
Bias Resistor Transistor PNP Silicon Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | |||
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Features 1) Built-In Biasing Resistors, R1 = R2 = 100kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. | ROHM 罗姆 | |||
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are | ROHM 罗姆 | |||
Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are | ROHM 罗姆 | |||
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of tw | ONSEMI 安森美半导体 | |||
Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are | ROHM 罗姆 | |||
Digital transistors (built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are | ROHM 罗姆 | |||
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) 文件:85.88 Kbytes Page:2 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR 文件:201.04 Kbytes Page:2 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR 文件:144.32 Kbytes Page:3 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) 文件:85.88 Kbytes Page:2 Pages | UTC 友顺 | |||
PNP -100mA -50V Digital Transistors 文件:1.68978 Mbytes Page:8 Pages | ROHM 罗姆 | |||
数字晶体管 | JSCJ 长晶科技 | |||
PNP -100mA -50V 数字晶体管(电阻内置型晶体管) | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) 文件:1.75028 Mbytes Page:9 Pages | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:148.24 Kbytes Page:3 Pages | ROHM 罗姆 | |||
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k 文件:126.48 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) 文件:166.88 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:148.24 Kbytes Page:3 Pages | ROHM 罗姆 | |||
封装/外壳:SC-75,SOT-416 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PNP, SOT-416, R1=R2 POTENTIAL DI 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
100mA / 50V Digital transistors 文件:162.91 Kbytes Page:3 Pages | ROHM 罗姆 | |||
封装/外壳:SC-89,SOT-490 包装:剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100MA 50V SOT-416FL 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.02057 Mbytes Page:8 Pages | ROHM 罗姆 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) 文件:166.88 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k 文件:126.48 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
PNP DIGITAL TRANSISTOR 文件:144.32 Kbytes Page:3 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR 文件:144.32 Kbytes Page:3 Pages | UTC 友顺 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:148.24 Kbytes Page:3 Pages | ROHM 罗姆 | |||
PNP DIGITAL TRANSISTOR 文件:201.04 Kbytes Page:2 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) 文件:85.88 Kbytes Page:2 Pages | UTC 友顺 | |||
PNP DIGITAL TRANSISTOR 文件:201.04 Kbytes Page:2 Pages | UTC 友顺 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:148.24 Kbytes Page:3 Pages | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
Digital Transistors (BRT) 文件:166.88 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k 文件:126.48 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) 文件:166.88 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k 文件:126.48 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.01966 Mbytes Page:8 Pages | ROHM 罗姆 | |||
PNP Digital Transistors (Built-in Resistors) 文件:155.98 Kbytes Page:4 Pages | CYSTEKEC 全宇昕科技 | |||
NPN Digital Transistors (Built-in Resistors) 文件:165.13 Kbytes Page:4 Pages | CYSTEKEC 全宇昕科技 | |||
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.07588 Mbytes Page:9 Pages | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:148.24 Kbytes Page:3 Pages | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor 文件:2.01388 Mbytes Page:13 Pages | ROHM 罗姆 | |||
Customer Specifications Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Ca | ALPHAWIRE | |||
Resistance, continuity, frequency, capacitance, and diode test 文件:1.30263 Mbytes Page:2 Pages | FLUKE 福禄克 | |||
Point-to-point Wiring 文件:300.88 Kbytes Page:1 Pages | ARIES | |||
Commercial 3/4 (19.05mm) diameter, 2 watt variable resistor 文件:1.06892 Mbytes Page:4 Pages | CTS 西迪斯 | |||
Temperature Sensors Line Guide 文件:736.09 Kbytes Page:11 Pages | Honeywell 霍尼韦尔 |
DTA115E产品属性
- 类型
描述
- 型号
DTA115E
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
DIGITAL TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SC-75 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ROHM/罗姆 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
2016+ |
SOT-323 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
23+ |
SOT23 |
20000 |
全新原装假一赔十 |
|||
ROHM |
24+ |
SOT-523 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ROHM/罗姆 |
25+ |
SOD323 |
6000 |
原装正品,假一罚十! |
|||
ROHM |
NEW |
SOT423 |
11092 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ROHM/罗姆 |
25+ |
SOT423 |
32000 |
ROHM/罗姆全新特价DTA115EETL即刻询购立享优惠#长期有货 |
|||
ROHM |
07+ |
SOT23 |
2306 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
DTA115E规格书下载地址
DTA115E参数引脚图相关
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- DTA12-Y
- DTA125T
- DTA124X
- DTA124T
- DTA124G
- DTA124E
- DTA124
- DTA123Y
- DTA123J
- DTA123EU(A)
- DTA123EE
- DTA123EC,EK(A)
- DTA123E(A,F,L,S,V)
- DTA123E
- DTA115UU(A)
- DTA115UE
- DTA115UC,UK(A)
- DTA115U(A,F,L,S,V)
- DTA115U
- DTA115TU(A)
- DTA115TE
- DTA115TC,TK(A)
- DTA115T(A,F,L,S,V)
- DTA115T
- DTA115GU(A)
- DTA115GE
- DTA115GC,GK(A)
- DTA115G(A,F,L,S,V)
- DTA115G
- DTA115EU(A)
- DTA115EE
- DTA115EC,EK(A)
- DTA115E(A,F,L,S,V)
- DTA115
- DTA114YE
- DTA114YC,YK(A)
- DTA114Y(A,F,L,S,V)
- DTA114Y
- DTA114WU(A)
- DTA114WE
- DTA114WC,WK(A)
- DTA114W(A,F,L,S,V)
- DTA114W
- DTA114TU(A)
- DTA114TC,TK(A)
- DTA114T(A,F,L,S,V)
- DTA114T
- DTA114GU(A)
- DTA114GE
- DTA114GC,GK(A)
- DTA114G(A,F,L,S,V)
- DTA114G
- DTA114EU(A)
- DTA114EE
- DTA114EC,EK(A)
- DTA114E(A,F,L,S,V)
- DTA114E
- DTA113ZU(A)
- DTA113ZE
- DTA113Z
- DTA113T
- DTA113
- DTA08E
- DTA-080
- DTA08
- DTA-070
- DTA05E
- DTA05C
- DTA05B
- DTA05
- DTA044T
- DTA044E
- DTA043Z
DTA115E数据表相关新闻
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描述: 该FCT162244T16位缓冲器/线路驱动器,是用于总线接口或信号缓冲适用于需要高速和低功耗。这些通过引脚器件有一个组织流程,简化和收缩包装电路板布局。所有输入的设计与改进的噪声容限的滞后。三态控制允许独立的4位,8位或联合16位运作。这些部分在哪里更换插头54/74ABT16244更高的速度,更低的噪音和低功耗水平的需要。该FCT162244T有平衡输出电流水平和电流限制电阻。这些具有低接地反弹,最小冲和控制输出下降时间,从而降低了外部串联电阻器的需要而终止还提供了对小于200pF负载非常高的速度运行。 特点: •
2013-3-5
DdatasheetPDF页码索引
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