Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

Digital Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN types available(DTC). ● Built-in biasing resistors,R1≠R2 ● Also available in lead free version. APPLICATIONS ● The PNP style digital transistor.

PNP -100mA -50V 数字晶体管（电阻内置型晶体管）

DTA113ZCA是电阻内置型晶体管。由于内置了偏压用电阻，因此输入侧无需外接电阻即可构成倒相电路。 • Built-In Biasing Resistors, R1= 1kΩ, R2= 10kΩ\n• Only the on/off conditions need to be set for operation, making the circuit design easy.\n• Complementary NPN Types: DTC113ZCA;

丝印代码：E11；Digital Transistor

Features - Epitaxial planar die construction. - Built-in biasing resistors, R1≠R2.

PNP -100mA -50V 数字晶体管（电阻内置型晶体管）

DTA113ZCAHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 • Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ\n• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) .\n• Only the on/off conditions need to be set for operation, making the circuit design easy.\n• Complementary ;

PNP Digital Transistors

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Epitaxial planar die construction.

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Small Signal Transistor

PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：1.12485 Mbytes Page：9 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PNP -100MA -50V DIGITAL TRANSIST 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PNP, SOT-23, R1R2 LEAK ABSORPTIO 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages