LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

PNP, 40V, 1.8A, SOT563

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DSS4240V) • Low Collector-Emitter Saturation Voltage, VCE(SAT) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note

40V PNP LOW SATURATION TRANSISTOR IN SOT563

Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • IC = -1.8A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Collector-Emitter Saturation Voltage • Totally Lead-Fr

PNP, 40V, 1.8A, SOT563

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.\n\n

丝印代码：ZP8；40V PNP LOW SATURATION TRANSISTOR IN SOT563

Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -40V • IC = -1.8A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Collector-Emitter Saturation Voltage • Totally Lead-Fr

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

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封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.8A SOT563 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

50 Watt Zener Diodes 짹5 Tolerance

Features: ● Zener Voltage 3.9 to 200V ● Low Zener Impedance ● Highly Reliable and Rugged ● Also Available in Reverse Polarity (NTE5240AK thru NTE5296AK)