40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

NPN, 40V, 0.5A, DFN1006-3

40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

40V NPN LOW VCE(sat) TRANSISTOR

文件：409.86 Kbytes Page：7 Pages

封装/外壳：3-UFDFN 包装：卷带（TR） 描述：TRANS NPN 40V 0.5A 3DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

QUAD DARLINGTON POWER DRIVER

Combining AND logic gates and inverting high-current bipolar outputs, the UDN2540B and A2540SLB quad Darlington power drivers provide interface between low-level signal-processing circuits and power loads totaling 360 W. Each of the four independent outputs can sink up to 1.8 A in the on state wit

Threaded Smooth Bore Bushings

文件：154.07 Kbytes Page：1 Pages

60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

文件：367.62 Kbytes Page：6 Pages

60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

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16 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

文件：510.42 Kbytes Page：38 Pages