SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current

SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY ??@TA =90??BARRIER RECTIFIER

Features · The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction,majority carrier conduction · Low power loss,high efficiency · High temperature soldering guaranteed: 260°C/10seconds,0.375(9.5mm) lead length, 5 lbs. (2.3kg)

1.0A 200V Schottky diode

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肖特基二极管

肖特基二极管

肖特基二极管

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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封装/外壳：SOD-123F 包装：卷带（TR） 描述：DIODE SCHOTTKY 200V SOD-123FL 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCHOTTKY 200V SOD-123FL 分立半导体产品 二极管 - 整流器 - 单

SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll