Flexible NV SRAM Stik

DESCRIPTION The DS2227 Flexible NV SRAM Stik is a self-contained 4,194,304-bit nonvolatile static RAM which can be flexibly organized as 128k x 32 bits, 256k x 16 bits, or 512k x 8 bits. The nonvolatile memory contains all necessary control circuitry and lithium energy sources to maintain data in

Flexible NV SRAM Stik

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灵活的NV SRAM存储条

Flexible NV SRAM Stik

DESCRIPTION The DS2227 Flexible NV SRAM Stik is a self-contained 4,194,304-bit nonvolatile static RAM which can be flexibly organized as 128k x 32 bits, 256k x 16 bits, or 512k x 8 bits. The nonvolatile memory contains all necessary control circuitry and lithium energy sources to maintain data in

Flexible NV SRAM Stik

DESCRIPTION The DS2227 Flexible NV SRAM Stik is a self-contained 4,194,304-bit nonvolatile static RAM which can be flexibly organized as 128k x 32 bits, 256k x 16 bits, or 512k x 8 bits. The nonvolatile memory contains all necessary control circuitry and lithium energy sources to maintain data in

Flexible NV SRAM Stik

DESCRIPTION The DS2227 Flexible NV SRAM Stik is a self-contained 4,194,304-bit nonvolatile static RAM which can be flexibly organized as 128k x 32 bits, 256k x 16 bits, or 512k x 8 bits. The nonvolatile memory contains all necessary control circuitry and lithium energy sources to maintain data in

封装/外壳：72-SIMM 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 72SIMM 集成电路（IC） 存储器

封装/外壳：72-SIMM 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 72SIMM 集成电路（IC） 存储器

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards

General Description BD2226G and BD2227G are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2226G and BD2227G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start

INTERCONNECT BATTERY HOLDERS

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CUSTOMER PRODUCT SPECIFICATION

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2227MC Series - IC Sockets

文件：101.92 Kbytes Page：2 Pages

The temperature was measured using the FG-100 thermometer.

文件：2.36251 Mbytes Page：15 Pages