T1/CEPT Elastic Store

DESCRIPTION The DS2175 is a low–power CMOS elastic–store memory optimized for use in primary rate telecommunications transmission equipment. The device serves as a synchronizing element between async data streams and is compatible with North American (T1–1.544 MHz) and European (CEPT–2.048 MHz) r

T1/CEPT弹性存储器

The DS2175 is a low-power CMOS elastic-store memory optimized for use in primary rate telecommunications transmission equipment. The device serves as a synchronizing element between async data streams and is compatible with North American (T1-1.544MHz) and European (CEPT-2.048MHz) rate networks. The \n• Rate buffer for T1 and CEPT transmission systems \n• Synchronizes loop-timed and system-timed data streams on frame boundaries \n• Ideal for T1 (1.544 MHz) to CEPT (2.048MHz), CEPT to T1 interfaces \n• Supports parallel and serial backplanes \n• Buffer depth is 2 frames \n• Comprehensive on-chip;

封装/外壳：16-DIP（0.300"，7.62mm） 功能：弹性储存 包装：托盘 描述：IC TELECOM INTERFACE 16DIP 集成电路（IC） 电信

T1/CEPT Elastic Store

DESCRIPTION The DS2175 is a low–power CMOS elastic–store memory optimized for use in primary rate telecommunications transmission equipment. The device serves as a synchronizing element between async data streams and is compatible with North American (T1–1.544 MHz) and European (CEPT–2.048 MHz) r

LINEAR CURRENT SENSING IC

The IR2175 is a monolithic current sensing IC designed for motor drive applications. It senses the motor phase current through an external shunt resistor, converts from analog to digital signal, and transfers the signal to the low side. IR’s proprietary high voltage isolation technology is imple

3V 400MHZ LINEAR AMPLIFIER

Product Description The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA handheld

3V 400MHZ LINEAR AMPLIFIER

Product Description The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA handheld