单芯片、1M非易失SRAM

DS2045是1Mb, 可回流焊的非易失(NV) SRAM，由一个静态RAM (SRAM)，一个NV控制器和一个内部可充电锰锂(ML)电池构成。这些元件封装在表贴模块中，采用256焊球BGA封装。模块VCC上电后，ML电池开始充电，SRAM由外部电源供电，SRAM内容可修改。VCC断电或超出容限时，控制器对SRAM的内容进行写保护，并由电池对SRAM供电。DS2045有两种版本，分别提供5%和10%的电源监控跳变点。DS2045还具有一个电源监控输出，/RST指示，可用作微处理器的CPU监视器。 \n• 单片，可回流焊，27mm x 27mm BGA封装 \n• 内部ML电池和充电器 \n• VCC超出容限后，对SRAM无条件写保护 \n• VCC电源失效后，自动切换到电池供电 \n• 内部电源监控，检测电源是否低于标称VCC (5V)的5%或10% \n• 复位输出可用作微处理器的CPU监视器 \n• 工业级温度范围(-40°C至+85°C);

Single-Piece 1Mb Nonvolatile SRAM

文件：428 Kbytes Page：12 Pages

封装/外壳：256-BGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 256BGA 集成电路（IC） 存储器

Single-Piece 1Mb Nonvolatile SRAM

文件：428 Kbytes Page：12 Pages

DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM

文件：222.97 Kbytes Page：12 Pages

Single-Piece 1Mb Nonvolatile SRAM

文件：428 Kbytes Page：12 Pages

封装/外壳：256-BGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 256BGA 集成电路（IC） 存储器

DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM

文件：222.97 Kbytes Page：12 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara