单芯片、256k位非易失SRAM

DS2030是256kb, 可回流焊的非易失(NV) SRAM，由一个静态RAM (SRAM)，一个NV控制器和一个内部可充电锰锂(ML)电池构成。这些元件封装在表贴模块中，采用256焊球BGA封装。模块VCC上电后，ML电池开始充电，SRAM由外部电源供电，SRAM内容可修改。VCC断电或超出容限时，控制器对SRAM的内容进行写保护，并由电池对SRAM供电。DS2030有两种版本，分别提供5%和10%的电源监控跳变点。DS2030还具有一个电源监控输出，/RST指示，可用作微处理器的CPU监视器。 \n• 单片，可回流焊，27mm x 27mm BGA封装 \n• 内部ML电池和充电器 \n• VCC超出容限后，对SRAM无条件写保护 \n• VCC电源失效后，自动切换到电池供电 \n• 内部电源监控，检测电源是否低于标称VCC (5V)的5%或10% \n• 复位输出可用作微处理器的CPU监视器 \n• 工业级温度范围(-40°C至+85°C);

Single-Piece 256kb Nonvolatile SRAM

文件：430.18 Kbytes Page：12 Pages

Single-Piece 256kb Nonvolatile SRAM

文件：430.18 Kbytes Page：12 Pages

封装/外壳：256-BGA 包装：托盘 描述：IC NVSRAM 256KBIT PAR 256BGA 集成电路（IC） 存储器

Single-Piece 256kb Nonvolatile SRAM

文件：430.18 Kbytes Page：12 Pages

封装/外壳：256-BGA 包装：托盘 描述：IC NVSRAM 256KBIT PAR 256BGA 集成电路（IC） 存储器

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara