4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes Page：10 Pages

4096k非易失SRAM，带有电池监测器

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

封装/外壳：34-PowerCap™ 模块 包装：管件 描述：IC NVSRAM 4MBIT PAR 34PWRCAP 集成电路（IC） 存储器

4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes Page：10 Pages

封装/外壳：34-PowerCap™ 模块 包装：管件 描述：IC NVSRAM 4MBIT PAR 34PWRCAP 集成电路（IC） 存储器

4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes Page：10 Pages

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1350NT variable capacitance diode was specially made to be used as tuning elements in car radios, radio cassettes, stereos, and other consumer radios. The KV1350NT is suitable for wide band tuning from 76 to 108 MHz. If the KV1350NT is used only for FM reception, it is possible

High Tone Quality Melody LSI

OVERVIEW The SM1350 series are single-chip high tone quality melody ICs, fabricated using NPC’s Molybdenumgate CMOS process. Melodies are selected in serial or binary (parallel) mode, up to a maximum of 16 melody blocks. There are 4 sound generators incorporated to produce 4 kinds of output tone

Discrete MESFET

Description The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes. The TGF1350-SCC is readily assembled using

IEC 958 audio DAC

文件：154.71 Kbytes Page：36 Pages

IEC 958 audio DAC

文件：124.98 Kbytes Page：32 Pages