DS135价格

参考价格:¥7.6690

型号:DS1351-1R0M-B 品牌:TE 备注:这里有DS135多少钱,2024年最近7天走势,今日出价,今日竞价,DS135批发/采购报价,DS135行情走势销售排行榜,DS135报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DS135

1.0APowerRectifier

DiffusedJunctionTypeSiliconDiode Features •Plasticmoldedtype. •Peakreversevoltage:100to400V. •Averagerectifiedcurrent:IO=1.0A.

SANYOSanyo

三洋三洋电机株式会社

SANYO

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

3.3V4096KNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

Dallas

Dallas Semiconductor Corp.

Dallas

3.3V4096KNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

Dallas

Dallas Semiconductor Corp.

Dallas

3.3V4096KNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

Dallas

Dallas Semiconductor Corp.

Dallas

ShieldedDrumCoreInductors

Features: ●Highenergystorageandlowresistance. ●IdealforDC-DCbuckorboostconversion. ●Reliablesurfacemounting. ●Drop-inreplacementsforindustryprevalentcompetitorseries. ●Robusttemperaturedeflectiontopreventdamageduringsolderreflow. ●TapeandReelmechanicalspe

MACOM

Tyco Electronics

MACOM

DiffusedJunctionTypeSiliconDiode1.0APowerRectifier

DiffusedJunctionTypeSiliconDiode 1.0APowerRectifier Features •Plasticmoldedstructure. •Peakreversevoltage:VRM=--100to--400V. •Averageoutputcurrent:IO=1.0A.

SANYOSanyo

三洋三洋电机株式会社

SANYO

1.0APowerRectifier

DiffusedJunctionTypeSiliconDiode Features •Plasticmoldedtype. •Peakreversevoltage:100to400V. •Averagerectifiedcurrent:IO=1.0A.

SANYOSanyo

三洋三洋电机株式会社

SANYO

1.0APowerRectifier

DiffusedJunctionTypeSiliconDiode Features •Plasticmoldedtype. •Peakreversevoltage:100to400V. •Averagerectifiedcurrent:IO=1.0A.

SANYOSanyo

三洋三洋电机株式会社

SANYO

1.0APowerRectifier

DiffusedJunctionTypeSiliconDiode Features •Plasticmoldedtype. •Peakreversevoltage:100to400V. •Averagerectifiedcurrent:IO=1.0A.

SANYOSanyo

三洋三洋电机株式会社

SANYO

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

封装/外壳:34-PowerCap™ 模块 包装:管件 描述:IC NVSRAM 4MBIT PAR 34PWRCAP 集成电路(IC) 存储器

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

封装/外壳:34-PowerCap™ 模块 包装:管件 描述:IC NVSRAM 4MBIT PAR 34PWRCAP 集成电路(IC) 存储器

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

3.3V4096kNonvolatileSRAMwithBatteryMonitor

文件:217.87 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

4096KNonvolatileSRAMwithBatteryMonitor

文件:387.66 Kbytes Page:9 Pages

MaximMaximIntegrated

美信半导体

Maxim

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

4096kNonvolatileSRAMwithBatteryMonitor

文件:225.14 Kbytes Page:10 Pages

MaximMaximIntegrated

美信半导体

Maxim

WetTantalumCapacitorsTantalum-CasewithGlass-to-TantalumHermeticSealFor-55°Cto200°COperation

FEATURES •Axialthrough-holeterminations:Standardtin/lead(SnPb),100tin(RoHScompliant)available •Standardandextendedratings •Model135Dtantalum-caseelectrolyticcapacitorsincorporatetheadvantagesofallthevarietiesofelectrolyticcapacitorsandeliminatemostofthe

VishayVishay Siliconix

威世科技

Vishay

WetTantalumCapacitorsTantalum-CasewithGlass-to-TantalumHermeticSealfor-55째Cto200째COperation

FEATURES •Axialthrough-holeterminations:Standardtin/lead(SnPb),100tin(RoHScompliant)available •Standardandextendedratings •Model135Dtantalum-caseelectrolyticcapacitorsincorporatetheadvantagesofallthevarietiesofelectrolyticcapacitorsandeliminatemostofthe

VishayVishay Siliconix

威世科技

Vishay

STRAIGHTMINIATUREPOWERJACKS(continued)

文件:412.73 Kbytes Page:1 Pages

SWITCH

Switch Publishing Co.,Ltd.

SWITCH

TemperatureSensorsLineGuide

文件:736.09 Kbytes Page:11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

文件:124.92 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

DS135产品属性

  • 类型

    描述

  • 型号

    DS135

  • 制造商

    DALLAS

  • 制造商全称

    Dallas Semiconductor

  • 功能描述

    4096k Nonvolatile SRAM with Battery Monitor

更新时间:2024-4-19 16:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DALLAS
9229+
SOP16
880000
明嘉莱只做原装正品现货
DALLAS
23+
DIP-32
90000
只做原厂渠道价格优势可提供技术支持
DALLAS
7
全新原装 货期两周
DALLAS
22+
DIP
2000
全新原装品牌专营
DALLAS
23+
SOP8
5000
原装正品,假一罚十
DALL
22+
SOP16
2960
诚信交易大量库存现货
DALLAS
23+
LPM
65480
DALL
SOP16
68900
原包原标签100%进口原装常备现货!
DALLAS
1836+
SOP16
9852
只做原装正品现货!或订货假一赔十!
MAXIM/美信
23+
NA
30000
房间原装现货特价热卖,有单详谈

DS135芯片相关品牌

  • ALSC
  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

DS135数据表相关新闻