Serial Alarm Real-Time Clock

FEATURES ● Real-Time Clock (RTC) Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 ● 96-Byte, Battery-Backed NV RAM for Data Storage ● Two Time-of-Day Alarms, Programmable on Combination of Seconds, Minutes, Ho

Serial Alarm Real Time Clock RTC

FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 96-byte nonvolatile RAM for data storage Two Time of Day Alarms - programmable on combination of seconds, minutes, hours, and day of th

Serial Alarm Real-Time Clock

文件：377.44 Kbytes Page：22 Pages

封装/外壳：16-DIP（0.300"，7.62mm） 包装：管件 描述：IC RTC CLK/CALENDAR SPI 16-DIP 集成电路（IC） 实时时钟

Serial Alarm Real-Time Clock

文件：553.87 Kbytes Page：21 Pages

Serial Alarm Real-Time Clock

FEATURES ● Real-Time Clock (RTC) Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 ● 96-Byte, Battery-Backed NV RAM for Data Storage ● Two Time-of-Day Alarms, Programmable on Combination of Seconds, Minutes, Ho

Serial Alarm Real-Time Clock

文件：553.87 Kbytes Page：21 Pages

封装/外壳：16-DIP（0.300"，7.62mm） 包装：管件 描述：IC RTC CLK/CALENDAR SPI 16-DIP 集成电路（IC） 实时时钟

Serial Alarm Real-Time Clock

文件：377.44 Kbytes Page：22 Pages

Serial Alarm Real Time Clock RTC

FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 96-byte nonvolatile RAM for data storage Two Time of Day Alarms - programmable on combination of seconds, minutes, hours, and day of th

TMOS POWER FET 75 AMPERES

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is des

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

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