Trickle Charge Timekeeping Chip

DETAILED DESCRIPTION The DS1302 trickle-charge timekeeping chip contains a real-time clock/calendar and 31 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real-time clock/calendar provides seconds, minutes, hours, day, date, month, and year informatio

Trickle Charge Timekeeping Chip

DESCRIPTION The DS1302 Trickle Charge Timekeeping Chip contains a real time clock/calendar and 31 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. The en

Trickle Charge Timekeeping Chip

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封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC RTC CLK/CALENDAR SER 8-DIP 集成电路（IC） 实时时钟

Trickle-Charge Timekeeping Chip

文件：649.39 Kbytes Page：16 Pages

Trickle-Charge Timekeeping Chip

DETAILED DESCRIPTION The DS1302 trickle-charge timekeeping chip contains a real-time clock/calendar and 31 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real-time clock/calendar provides seconds, minutes, hours, day, date, month, and year informatio

Trickle-Charge Timekeeping Chip

文件：649.39 Kbytes Page：16 Pages

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC RTC CLK/CALENDAR SER 8-DIP 集成电路（IC） 实时时钟

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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