2048k Nonvolatile SRAM

DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

2048k非易失SRAM

DS1249 2048k非易失(NV) SRAM为2,097,152位、全静态非易失SRAM，按照8位、262,144字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 没有写次数限制\n• 低功耗CMOS操作 \n• 70ns的读写存取时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1249Y) \n• 可选择±5% VCC工作范围(DS1249AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的32引脚DIP封装;

2048k Nonvolatile SRAM

文件：214.6 Kbytes Page：9 Pages

2048k Nonvolatile SRAM

DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

2048k Nonvolatile SRAM

DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 2MBIT PARALLEL 32EDIP 集成电路（IC） 存储器

封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：托盘 描述：IC NVSRAM 2MBIT PARALLEL 32EDIP 集成电路（IC） 存储器

2048k Nonvolatile SRAM

文件：214.6 Kbytes Page：9 Pages

2048k Nonvolatile SRAM

文件：214.6 Kbytes Page：9 Pages

Active-Low Input,8-Unit, High-Current, Low-Saturation Driver???

Features • Low active input type. • On-chip input protecting diodes. • High current capacity (400mA) and low saturation voltage (0.5V max). • On-chip spark killer diodes. • Wide duty due to Pd of 3W max. Applications • 4-phase stepping motor driver of 2 channels. • Especi

Integrated Circuit Balancd Modulator

Description: The NTE1249 is a balancd modulator circuit in a 7–Lead SIP type package designed for use in SSB CB equipment. Features: Low Operating Voltage High Carrier Suppression Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC . . . . .

2-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR

2-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR

2-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR

2-CHANNEL RECORDING AMPLIFIER & PRE-AMPLIFIER FOR VCR

Power Factor Controller

文件：143.02 Kbytes Page：12 Pages