位置：首页 > IC中文资料第8946页 > DS1249Y
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1249Y | 2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas |   | |
DS1249Y | 2048k Nonvolatile SRAM 文件：214.6 Kbytes Page：9 Pages | Maxim 美信 | | |
DS1249Y | 2048k非易失SRAM | AD 亚德诺 | | |
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 2MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：托盘 描述：IC NVSRAM 2MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
2048k Nonvolatile SRAM 文件：214.6 Kbytes Page：9 Pages | Maxim 美信 | | ||
2048k Nonvolatile SRAM 文件：214.6 Kbytes Page：9 Pages | Maxim 美信 | | ||
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
NTSC color bar pattern, 짹5 and 文件：84.69 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
500 SK II/10 MDS GW 文件：121.33 Kbytes Page：2 Pages | ADELS | | ||
500 SK II/11 MDS GW 文件：121.54 Kbytes Page：2 Pages | ADELS | | ||
500 SK II/12 MDS GW 文件：121.96 Kbytes Page：2 Pages | ADELS | |
DS1249Y产品属性
- 类型
描述
- 型号
DS1249Y
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
2048k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
23+ |
DIP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
DALLAS |
23+ |
DIP |
38163 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
DALLAS |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
DALLAS |
22+ |
DIP |
12245 |
现货,原厂原装假一罚十! |
|||
DALLAS |
24+ |
37500 |
只做自己原装现货,价格最优 |
||||
DS1249Y-70 |
25+ |
151 |
151 |
||||
DALLAS |
23+ |
DIP32 |
65480 |
||||
DALLAS |
23+ |
DIP |
6000 |
原装正品假一罚百!可开增票! |
|||
DALLAS |
25+23+ |
DIP |
33219 |
绝对原装正品全新进口深圳现货 |
|||
DALLAS |
25+ |
PSDIP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
DS1249Y规格书下载地址
DS1249Y参数引脚图相关
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特点 促进不间断电源 只有当主VCC是不可用的使用电池 低正向压降 电源故障信号中断的处理器，或写保护内存 功耗小于100 nA的电池电流 低电量警告信号 电池可电断开后命令 当VCC应用，电池会自动重新连接 配合DS1212非易失控制器×16片直接与备份16的RAM 可选的16引脚SOIC表面贴装封装 DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
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DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
DdatasheetPDF页码索引
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