SmartWatch RAM (DS1216B/C/D/H); SmartWatch ROM (DS1216E/F)

GENERAL DESCRIPTION The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy source. The sockets provide an NV RAM solution for memory sized from 2K x 8 to 512K x 8 with

SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F

GENERAL DESCRIPTION The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy source. The sockets provide an NV RAM solution for memory sized from 2K x 8 to 512K x 8 with

SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F

The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy source. The sockets provide an NV RAM solution for memory sized from 2k x 8 to 512k x 8 with package sizes from 26 pins \n• Converts Standard 2k x 8 Up to 512k x 8 CMOS Static RAMs into Nonvolatile Memory \n• Watch Function is Transparent to RAM Operation \n• Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time \n• Full ±10% Operating Range \n• Accu;

封装/外壳：28-DIP（0.600"，15.24mm）插口 包装：管件 描述：IC SMARTWATCH/ROM 256K 5V 28-DIP 集成电路（IC） 控制器

TV-AUDIO PROCESSOR IC

TV-AUDIO PROCESSOR IC

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

N-Channel Enhancement-Mode Vertical DMOS Power FETs????

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P-Channel Enhancement-Mode Vertical DMOS Power FETs???

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half