Rectifier Diode Avalanche Diode

VRRM = 1200-1800 V IF(RMS) = 7 A IF(AV)M = 2.3 A Features ● Plastic standard package ● Planar glassivated chips Applications ● Low power rectifiers ● Field supply for DC motors ● Power supplies ● High voltage rectifiers Advantages ● Space and weight savings ● Simple PCB mounting ● Im

Rectifier Diode Avalanche Diode

VRRM = 1200-1800 V\nIF(RMS) = 7 A\nIF(AV)M = 2.3 A ● Plastic standard package\n● Planar glassivated chipsApplications\n● Low power rectifiers\n● Field supply for DC motors\n● Power supplies\n● High voltage rectifiersAdvantages\n● Space and weight savings\n● Simple PCB mounting\n● Improved temperature and power cycling\n● Reduced protection circuits ;

封装/外壳：径向 包装：卷带（TR） 描述：DIODE GEN PURP 1.2KV 2.3A RADIAL 分立半导体产品 二极管 - 整流器 - 单

HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY

HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY FEATURES • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW (1a), 400 mW (1c) • High surge voltage: 8,000 V between contacts and coil • UL, CSA, VDE, TÜV, SEMKO approved • Class B c

HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY

HIGH ELECTRICAL & MECHANICAL NOISE IMMUNITY RELAY FEATURES • High electrical noise immunity • High switching capacity in a compact package • High sensitivity: 200 mW (1a), 400 mW (1c) • High surge voltage: 8,000 V between contacts and coil • UL, CSA, VDE, TÜV, SEMKO approved • Class B c

Supplementary Overcurrent Protection

Midget Fuses Supplementary Overcurrent Protection

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB1-12T is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Class C Operation • PG = 10 dB at 1.0 W/175 MHz • Omnigold™ Metalization System

QP/P1 SERIES CONNECTOR

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