DS06晶体管资料
DS06别名：DS06三极管、DS06晶体管、DS06晶体三极管
DS06生产厂家：中国大陆半导体企业
DS06制作材料：
DS06性质：低频或音频放大 （LF）_功率放大 （PA）
DS06封装形式：直插封装
DS06极限工作电压：
DS06最大电流允许值：0.5A
DS06最大工作频率：<1MHZ或未知
DS06引脚数：3
DS06最大耗散功率：5W
DS06放大倍数：
DS06图片代号：B-77
DS06vtest：0
DS06htest：999900
- DS06atest：0.5
DS06wtest：5
DS06代换 DS06用什么型号代替：
DS06价格
参考价格：￥4.1454
型号：DS06T 品牌：Apem 备注：这里有DS06多少钱，2026年最近7天走势，今日出价，今日竞价，DS06批发/采购报价，DS06行情走势销售排行榜，DS06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS06 | 包装：袋 描述：SWITCH SLIDE DIP SPST 50MA 24V 开关 DIP 开关 | ETC 知名厂家 | ETC |   |
丝印代码：DS065016G3；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Features AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent s witching behavior System cost / size savings due to reduced cooling requirements J unction temperature range | SANAN 三安光电 | | ||
丝印代码：DS065020C3；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp | SANAN 三安光电 | | ||
丝印代码：DS065020E3；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp | SANAN 三安光电 | | ||
丝印代码：DS065020G3；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com | SANAN 三安光电 | | ||
丝印代码：DS065020H3；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp | SANAN 三安光电 | | ||
丝印代码：DS065040G3；3 rd Generation 65 0V/ 4 0 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent s witching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com | SANAN 三安光电 | | ||
丝印代码：DS065002D3；3 rd Generation 650 V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065004C3；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065004C4；4 th Generation 650V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed s witching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065004D3；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065004D4；4 th Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065006C3；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065006D3；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065006E3；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse re covery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065006S3；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide ( N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065008C3；3 rd Generation 650 V/ 8A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065008D3；650V/8A SiC Schottky Barrier Diode Zero Reverse Recovery Current Positive temperature coefficient Temperature independent performance High speed switching Low switching loss Low hea t dissipation req uirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive traction ➢ Charging pile | SANAN 三安光电 | | ||
丝印代码：DS065008D4；4 th Generation 650 V/ 8 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065008N3；650V/8A SiC Schottky Barrier Diode Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switc hing loss Low heat dissipation requirements | SANAN 三安光电 | | ||
丝印代码：DS065008S3；3 rd Generation 65 0V/ 8A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065010C3；3 rd Generation 650 V/ 10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065010D3；3 rd Generation 650 V/ 1 0 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065010E3；3 rd Generation 65 0V/ 10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065010N3；650V/10A SiC Schottky Barrier Diode Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switch ing loss Low heat dissipation requirements | SANAN 三安光电 | | ||
丝印代码：DS065010S3；3 rd Generation 65 0V/ 10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065012C3；3 rd Generation 650 V/ 12A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065012S3；3rd Generation 65 0V/ 12A SiC Schottky Barrier Diode Revolutionary semiconductor material Si licon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065016C3；3 rd Generation 650 V/ 16A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065016G3；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065016H3；3 rd Generation 650 V/ 16 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065020C3；3 rd Generation 650 V/ 20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065020D3；3 rd Generation 650 V/2 0 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed swit ching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065020G3；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065020H3；3 rd Generation 65 0V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065020W3；3rd Generation 650V20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) Insulated package TO-3 PF an insulation voltage of 2.5kV No reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction tempera | SANAN 三安光电 | | ||
丝印代码：DS065030G3；3 rd Generation 65 0V/ 30 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065040G3；3 rd Generation 65 0V/ 40 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS065050H3；3 rd Generation 65 0V/ 50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
Pin Diode SP2T FEATURES • 20- 2000 MHz • Low Cost • TTL Driver • Non-Reflective • 14 Pin DIP | DAICO | | ||
PIN Diode SP2T FEATURES • 5-2000 MHz • TTL Driver • 14 Pin DIP | DAICO | | ||
PIN Diode SP4T FEATURES ■ 10 - 1000 MHz ■ 18 mA, +5 VDC ■ Low Insertion Loss ■ 70 dB Isolation | DAICO | | ||
GaAs SP2T 文件：180.04 Kbytes Page：1 Pages | DAICO | | ||
DAICO Switches SPST, SP2T | DAICO | | ||
包装：盒 描述：DC SERVER FANS 60 X 60 X 56 87.8 风扇，热管理 无刷直流风扇（BLDC） | ETC 知名厂家 | ETC | | |
DAICO Switches SPST, SP2T | DAICO | | ||
DAICO Switches SPST, SP2T | DAICO | | ||
GaAs SP2T 文件：151.95 Kbytes Page：1 Pages | DAICO | | ||
DIESEL GENERATOR SET air charge -air cooling 文件：1.21082 Mbytes Page：4 Pages | MTU MTU Onsite Energy Corporation | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：247.09 Kbytes Page：5 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：247.09 Kbytes Page：5 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：247.09 Kbytes Page：5 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：247.09 Kbytes Page：5 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：296.47 Kbytes Page：4 Pages | DELTA 台达电子 | | ||
6W DC/DC CONVERTER, DIP-Package, 4:1 Wide Input Range 文件：247.09 Kbytes Page：5 Pages | DELTA 台达电子 | |
DS06产品属性
- 类型
描述
- 产品系列：
DS
- 封装外形：
HC-49S
- 标称频率：
6.000000MHz
- 负载电容：
18pF
- 频率稳定度_@25℃：
-30~+30ppm
- 工作温度范围：
-40~+85℃
- 温频特性：
-50~+50ppm
- 尺寸/长x宽：
11.40 x 4.70mm
- 高度/厚度：
3.60mm
- 切型：
AT Cut
- 振动模式：
Fundamental
- 谐振电阻：
100Ω
- 静态电容：
5.0pF
- 存储温度范围：
-55~+125℃
- 输出波形：
Sine Wave
- 激励功率：
100μW
- 引脚数：
2Pins
- 绝缘电阻_ @ DC100V：
500 MΩ
- 年老化率：
-3.0~+3.0ppm/year
- 封装技术：
Resistance Weld
- 包装类型：
Bag Packing
- 载带标准：
N/Amm
- 载盘尺寸：
N/A
- 最小包装数：
200Pcs
- 安装方式：
Through Hole
- 主要材质：
Quartz Crystal
- 品牌国别：
China
- 原始制造商：
Failong Crystal Technology Co.
- 印字类型：
Laser
- 净重：
0.4g
- 美国海关关税编码：
8541600030
- 欧洲进口关税编码：
8541600000
- 出口控制分类编号：
ERA99
- 别名：
--
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANANIC三安集成 |
2540+ |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
||||
HRO韩荣 |
2407+ |
DIP-6 |
30098 |
全新原装!仓库现货,大胆开价! |
|||
SWITCH |
16+ |
DIP-8 |
281 |
全新 发货1-2天 |
|||
APEM |
23+ |
65480 |
|||||
韩国韩荣 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
N/A |
N/A |
66 |
优势货源原装正品 |
||||
台湾圜达DIP |
20+ |
DIP |
1616 |
原装现货 |
|||
XKB CONNECTIVITY(中国星坤) |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
DIPTRONICS |
23+ |
50175 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
26+ |
N/A |
50000 |
一级代理-主营优势-实惠价格-不悔选择 |
DS06规格书下载地址
DS06参数引脚图相关
- f338
- F330
- f133
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- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
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- d类功放
- d触发器芯片
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- dsp芯片
- dsp技术
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- DS10F
- DS10E
- DS10D
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- DS10B
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- DS10
- DS0842
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- DS0820
- DS0812
- DS-080
- DS0778
- DS077
- DS0744
- DS0742
- DS073
- DS0712
- DS0705
- DS070
- DS06S
- DS0644
- DS0632
- DS0613
- DS0612
- DS0602
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- DS05E
- DS05A
- DS0551
- DS0545
- DS0519
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- DS05
- DS0492
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- DS-0348
- DS0345
- DS-0343
- DS-0341
- DS-0340
- DS-0336
- DS-0333
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- DS0319
- DS031
- DS030C
- DS030A
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- DS03
- DS01A
- DS010G
- DS010F
- DS010E
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- DS010C
- DS010B
- DS010A
- DRE3B...G
- DRD3B...G
- DRC3E
DS06数据表相关新闻
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2019-4-4DS1050-5位，可编程，脉宽调制器-1kHz时，为5kHz，10kHz时，和25KHZ
DS1050是一个可编程的，5位，脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号，从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率，并提供包括1kHz时，为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作，并提供兼容性与其他Dallas Semiconductor的2线的设备，如实时时钟（RTC的），数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制，电源电压的理想选择调整，电池充电电流调节。 DS
2012-12-3
DdatasheetPDF页码索引
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