丝印代码：8300D；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

丝印代码：8300D；DRV8300: Three-Phase BLDC Gate Driver

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封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：100-V MAX SIMPLE 3-PHASE GATE DR 集成电路（IC） 栅极驱动器

丝印代码：8300D；DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes (DRV8300D devices) • Supports Inverting and Non-Inverting INLx inputs • Bootstrap gate drive ar

丝印代码：8300D-Q；DRV8300-Q1: 100-V Three-Phase BLDC Gate Driver

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C ≤ TA ≤ 125°C • 100-V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-20 V – MOSFET supply (SHx) support upto 100 V • Integrated Bootstrap Diodes • B

封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE 100-V MAX SIMPLE 3-PH 集成电路（IC） 栅极驱动器

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Gain Block Amplifier

DESCRIPTION The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a multioctave general - purpose gain block. Four 189 - µm gate width FETs provide 7.5 -dB nominal gain and 5.5- dB noise figure from 2 to 18- GHz. Typical power output is 20 - dBm at 1-dB gain co

MOTOR DRIVER FOR CAMERA

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