P-CHANNEL ENHANCEMENT MODE MOSFET

文件：332.99 Kbytes Page：7 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：332.99 Kbytes Page：7 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：332.99 Kbytes Page：7 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：623.59 Kbytes Page：7 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：623.59 Kbytes Page：7 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：623.59 Kbytes Page：7 Pages

Voltage controlled operational amplifier

The BA6110FS is a low-noise, low-offset programmable operational amplifier. Offering superb linearity over a broad range, this IC is designed so that the forward direction conductivity (gm) can be changed, making it ideal for applications such as voltage control amplifiers (VCA), voltage control f

Voltage controlled operational amplifier

The BA6110FS is a low-noise, low-offset programmable operational amplifier. Offering superb linearity over a broad range, this IC is designed so that the forward direction conductivity (gm) can be changed, making it ideal for applications such as voltage control amplifiers (VCA), voltage control f

0.56 INCH (14.2 MM) DUAL DIGIT STICK DISPLAY

Industrial Rectifier, 500 Amp

Industrial Rectifier, 500 Amp Electrical Characteristics: (Maximum Values @ TJ = +190°C unless otherwise specified) Peak Forward Voltage Drop (IFM = 500A), VFM . . . . . . . . . . . . . . . . 1.4V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . 0.8V

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.