您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第10617页 > DMN5

DMN5价格

参考价格：￥0.8083

型号：DMN5010VAK-7 品牌：Diodes Incorporated 备注：这里有DMN5多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5批发/采购报价，DMN5行情走势销售排行榜，DMN5报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DMN5

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：174.57 Kbytes Page：6 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5010VAK-13

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5010VAK-13A

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5010VAK-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5010VAK-7A

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5040LSS

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  Power Management Functions  DC-DC Convert

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5040LSS-13

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  Power Management Functions  DC-DC Convert

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0LT

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0LT-13

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0LT-7

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UV

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UV-13

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UV-7

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UVA

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UVA-13

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN52D0UVA-7

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-13

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-7

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ-13

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ-7

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ-13

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-13

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-7

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ-13

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-13

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-7

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0U

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0U-13

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0U-7

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODESDiodes Incorporated

美台半导体

DIODES
DMN55D0UT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate to 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN55D0UT-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate to 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06

SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06-7

SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DMK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DMK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DMKQ

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DMKQ-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DW-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DWK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06DWK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06K

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Features and Benefits  Low On-Re

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06T-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06TK

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06TK-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06V-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06VA

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES
DMN5L06VA-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODESDiodes Incorporated

美台半导体

DIODES

DMN5产品属性

  • 类型

    描述

  • 型号

    DMN5

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN5供应商更多...

更新时间：2025-8-5 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
DMN5L06TK-7
DIODES/美台
25+
SOT-523
38122
DIODES/美台全新特价DMN5L06TK-7即刻询购立享优惠#长期有货
询价
深圳市凌旭科技有限公司
DMN5010VAK-7
DIODES
2016+
SOT563
4800
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市科芯源微电子有限公司
DMN5010VAK-7
DIODES/美台
25+
SOT563-6
3000
原装正品,假一罚十!
询价
深圳市盈慧通电子有限公司
DMN5010VAK-7
DIODES/美台
2511
SOT-563
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市威雅利发展有限公司
DMN5010VAK-7
DIODES
15+
SOT-563
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市正迈科技有限公司
DMN5L06TK-7
DIODES
23+
3PINSOTSMD
150000
DMN5L06TK-7 MOSFET N-CH 50V 0.28A 3-Pin 280MA 现货供应优势
询价
深圳市正纳电子有限公司
DMN53D0LDW-7
DIODES/美台
23+
SOD363
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市澳亿芯电子科技有限公司
DMN5L06KQ-7
DIODES
24+
SOT-23
12000
原装正品 假一罚十
询价
深圳市振宏微科技有限公司
DMN5010VAK-7,BD49L51G,SRF1441NKC31-TB1
SOT553
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华康联电子科技有限公司
DMN53D0LTQ-7
DIODES
24+
N/A
10000
只做原装,实单最低价支持
询价

DMN5芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

DMN5规格书下载地址

DMN5参数引脚图相关

DMN5数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示