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位置：首页 > IC中文资料 > DMN5

DMN5价格

参考价格：￥0.8083

型号：DMN5010VAK-7 品牌：Diodes Incorporated 备注：这里有DMN5多少钱，2026年最近7天走势，今日出价，今日竞价，DMN5批发/采购报价，DMN5行情走势销售排行榜，DMN5报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN5

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：174.57 Kbytes Page：6 Pages

DIODES

美台半导体

DMN5010VAK-13

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DMN5010VAK-13A

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DMN5010VAK-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DMN5010VAK-7A

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DMN5040LSS

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  Power Management Functions  DC-DC Convert

DIODES

美台半导体

DMN5040LSS

50V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•Totally Lead-Free & Fully RoHS Compliant\n•Halogen and Antimony Free. “Green” Device\n•Qualified to AEC-Q101 Standards for High Reliability;

DIODES

美台半导体

DMN5040LSS-13

丝印代码：N5040LS；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  Power Management Functions  DC-DC Convert

DIODES

美台半导体

DMN52D0LT

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODES

美台半导体

DMN52D0LT

50V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DIODES

美台半导体

DMN52D0LT-13

丝印代码：NLT；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODES

美台半导体

DMN52D0LT-7

丝印代码：NLT；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

DIODES

美台半导体

DMN52D0U

50V N-Channel Enhancement Mode MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DIODES

美台半导体

DMN52D0UV

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN52D0UV-13

丝印代码：K52；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN52D0UV-7

丝印代码：K52；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN52D0UVA

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN52D0UVA-13

丝印代码：VAK；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN52D0UVA-7

丝印代码：VAK；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Haloge

DIODES

美台半导体

DMN53D0LDW

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODES

美台半导体

DMN53D0LDW-13

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODES

美台半导体

DMN53D0LDW-7

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

DIODES

美台半导体

DMN53D0LDWQ

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODES

美台半导体

DMN53D0LDWQ-13

丝印代码：MM5；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODES

美台半导体

DMN53D0LDWQ-7

丝印代码：MM5；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

DIODES

美台半导体

DMN53D0LQ

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODES

美台半导体

DMN53D0LQ-13

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODES

美台半导体

DMN53D0LQ-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage •

DIODES

美台半导体

DMN53D0LT

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODES

美台半导体

DMN53D0LT-13

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODES

美台半导体

DMN53D0LT-7

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a

DIODES

美台半导体

DMN53D0LTQ

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

DMN53D0LTQ-13

丝印代码：T53；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

DMN53D0LTQ-7

丝印代码：T53；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

DMN53D0LV

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODES

美台半导体

DMN53D0LV-13

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODES

美台半导体

DMN53D0LV-7

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

DIODES

美台半导体

DMN53D0U

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODES

美台半导体

DMN53D0U-13

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODES

美台半导体

DMN53D0U-7

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

DIODES

美台半导体

DMN55D0UT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate to 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability •

DIODES

美台半导体

DMN55D0UT-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate to 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability •

DIODES

美台半导体

DMN5L06

SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06-7

SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06DMK

丝印代码：DAB；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device

DIODES

美台半导体

DMN5L06DMK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device

DIODES

美台半导体

DMN5L06DMKQ

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi

DIODES

美台半导体

DMN5L06DMKQ-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi

DIODES

美台半导体

DMN5L06DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06DW-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06DWK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODES

美台半导体

DMN5L06DWK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODES

美台半导体

DMN5L06K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat

DIODES

美台半导体

DMN5L06K

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Features and Benefits  Low On-Re

DIODES

美台半导体

DMN5L06K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat

DIODES

美台半导体

DMN5L06T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06T-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06TK

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

DIODES

美台半导体

DMN5L06TK-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability

DIODES

美台半导体

DMN5L06V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5产品属性

  • 类型

    描述

  • Automotive Compliant PPAP：

    On Request*

  • Polarity：

    N+N

  • ESD Diodes：

    Yes

  • VDS：

    50 V

  • VGS：

    20 ±V

  • IDS @ TA = +25°C：

    0.28 A

  • PD @ TA = +25°C：

    0.25 W

  • RDS(ON) Max @ VGS (10V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    2500 mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    1 V

  • QG Typ @ VGS = 4.5V (nC)：

    N/A nC

  • QG Typ @ VGS = 10V (nC)：

    N/A nC

  • Packages：

    SOT563

DMN5供应商更多...

更新时间：2026-9-15 16:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市正迈科技有限公司
DMN5L06TK-7
DIODES
26+
3PINSOTSMD
150000
DMN5L06TK-7 MOSFET N-CH 50V 0.28A 3-Pin 280MA 现货供应优势
询价
深圳市正纳电子有限公司
DMN53D0LDW-7
DIODES/美台
26+
SOD363
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市向鸿伟业电子有限公司
DMN5L06TK-7
DIODES/美台
21+
SOT523
6000
原装正品,低价热卖!~24小时欢迎来电咨询,李先生13751179224!
询价
深圳市芯皇电子有限公司
DMN5L06DWK-7
DIODES/美台
26+
23+
6000
专业配单原装正品假一罚十
询价
深圳市拓亿芯电子有限公司
DMN5L06K-7
DIODES/美台
25+
SOT23-3
25000
全新原装现货,假一赔十
询价
深圳市金华微盛电子有限公司
DMN53D0U-7
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
询价
深圳市东来宝电子科技有限公司
DMN53D0LDW-7
DIODES
24+
Tube
447000
郑重承诺只做原装进口现货
询价
深圳市勤思达科技有限公司
DMN53D0LDW-7
DIODES(美台)
SOT-363-6
4809
全新原装正品现货可开票
询价
深圳市恒达亿科技有限公司
DMN5L06DWK-7
DIODES
25+
SOT363
6000
全新原装现货、诚信经营!
询价
深圳市华康联电子科技有限公司
DMN53D0LTQ-7
DIODES
24+
N/A
10000
只做原装,实单最低价支持
询价

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