N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features  100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application  Low RDS(ON) – Ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33 of the board area o

N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features  100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application  Low RDS(ON) – Ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33 of the board area o

N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features  100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application  Low RDS(ON) – Ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33 of the board area o

Halogen and Antimony Free. ?쏥reen??Device (Note 3)

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Qualified to AEC-Q101 Standards for High Reliability

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Low Gate Threshold Voltage

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100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Features Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control