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位置：首页 > IC中文资料 > DMN100

DMN100价格

参考价格：￥1.1558

型号：DMN100-7-F 品牌：Diodes 备注：这里有DMN100多少钱，2026年最近7天走势，今日出价，今日竞价，DMN100批发/采购报价，DMN100行情走势销售排行榜，DMN100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN100

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q

DIODES

美台半导体

DMN100

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101

ZPSEMIZP Semiconductor

至尚臻品

DMN100

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODES

美台半导体

DMN100

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODES

美台半导体

DMN100

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DMN1001UCA10

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 1.84mm × 1.96mm  Height = 0.30mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

DIODES

美台半导体

DMN1001UCA10-7

丝印代码：M7；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 1.84mm × 1.96mm  Height = 0.30mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

DIODES

美台半导体

DMN1002UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • CSP with Footprint 3.05mm ×1.77mm • Height = 0.11mm for Low Profile •

DIODES

美台半导体

DMN1002UCA6

12V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •CSP with Footprint 3.05mm × 1.77mm\n•Height = 0.11mm for Low Profile\n•ESD Protection of Gate;

DIODES

美台半导体

DMN1002UCA6-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • CSP with Footprint 3.05mm ×1.77mm • Height = 0.11mm for Low Profile •

DIODES

美台半导体

DMN1003UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. CSP with Footprint 3.54mm × 1.77mm\nHeight = 0.21mm for Low Profile\nESD Protection of Gate;

DIODES

美台半导体

DMN1004UFDF

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

DIODES

美台半导体

DMN1004UFDF-13

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

DIODES

美台半导体

DMN1004UFDF-7

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

DIODES

美台半导体

DMN1004UFV

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici

DIODES

美台半导体

DMN1004UFV-13

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici

DIODES

美台半导体

DMN1004UFV-7

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici

DIODES

美台半导体

DMN1006UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • CSP with Footprint 2.70mm ×1.81mm • Height = 0.21mm for Low Profile •

DIODES

美台半导体

DMN1006UCA6-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • CSP with Footprint 2.70mm ×1.81mm • Height = 0.21mm for Low Profile •

DIODES

美台半导体

DMN100-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q

DIODES

美台半导体

DMN1008UFDF

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gat

DIODES

美台半导体

DMN1008UFDF-13

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gat

DIODES

美台半导体

DMN1008UFDF-7

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gat

DIODES

美台半导体

DMN1008UFDFQ

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

DMN1008UFDFQ-13

丝印代码：8N；12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

DMN1008UFDFQ-7

丝印代码：8N；12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1008UFDFQ is suitable for automoti

DIODES

美台半导体

DMN100_0711

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODES

美台半导体

DMN100_1

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODES

美台半导体

DMN100_15

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：106.07 Kbytes Page：4 Pages

DIODES

美台半导体

DMN1003UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：490.94 Kbytes Page：7 Pages

DIODES

美台半导体

DMN1003UCA6-7

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：490.94 Kbytes Page：7 Pages

DIODES

美台半导体

DMN100-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODES

美台半导体

DMN100-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODES

美台半导体

RM100

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

MITSUBISHI

三菱电机

RM100CA-XXF

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

MITSUBISHI

三菱电机

RM100CZ-H

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

MITSUBISHI

三菱电机

RM100DZ-M

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

MITSUBISHI

三菱电机

TM100SZ-M

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

MEDIUM POWER GENERAL USE NON-INSULATED TYPE •IT (AV) Average on-state current 100A •VRRM Repetitive peak reverse voltage 400V •VDRM Repetitive peak off-state voltage 400V •TRIPLE ARMS •Non-Insulated Type APPLICATION Welders

MITSUBISHI

三菱电机

DMN100产品属性

  • 类型

    描述

  • Automotive Compliant PPAP：

    On Request*

  • Polarity：

    N

  • ESD Diodes：

    Yes

  • VDS：

    30 V

  • VGS：

    20 ±V

  • IDS @ TA = +25°C：

    1.1 A

  • PD @ TA = +25°C：

    0.5 W

  • RDS(ON) Max @ VGS (10V)：

    170 mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    240 mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    3 V

  • QG Typ @ VGS = 4.5V (nC)：

    N/A nC

  • QG Typ @ VGS = 10V (nC)：

    5.5 nC

  • Packages：

    SC59

DMN100供应商更多...

更新时间：2026-8-1 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市乾能惠电子有限公司
DMN1002UCA6-7
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
询价
深圳市明嘉莱科技有限公司
DMN1001UCA10-7
DIODES/美台
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市金华微盛电子有限公司
DMN100-7-F
DIODES/美台
2019+
SC59
78550
原厂渠道 可含税出货
询价
深圳市华康联电子科技有限公司
DMN1008UFDF-7
DIODES
24+
N/A
10000
只做原装,实单最低价支持
询价
深圳市纳艾斯科技有限公司
DMN1003UCA6-7
DIODES
24+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳诚思涵科技有限公司
DMN100-7
DIODES
16+
SOT23
12500
进口原装现货/价格优势!
询价
中天科工半导体（深圳）有限公司
DMN100-7
DIODES/美台
25+
SOT23
38025
DIODES/美台全新特价DMN100-7即刻询购立享优惠#长期有货
询价
深圳市坤融电子科技有限公司
DMN1008UFDF-7
DIODES/美台
2025+
U-DFN2020-6
5000
原装进口价格优 请找坤融电子!
询价
深圳市星源辉科技有限公司
DMN100-7-F
DIODES/美台
26+
SC59
18000
原装正品,可配单,支持实单
询价
深圳市河锋鑫科技有限公司
DMN100-7-F
DIODES/美台
2019+PB
SC59
45000
原装正品 可含税交易
询价

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DMN100规格书下载地址

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