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DMN100价格
参考价格：￥1.1558
型号：DMN100-7-F 品牌：Diodes 备注：这里有DMN100多少钱，2024年最近7天走势，今日出价，今日竞价，DMN100批发/采购报价，DMN100行情走势销售排行榜，DMN100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN100 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIA Cards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q | DIODESDiodes Incorporated 达尔科技 |  |   |
DMN100 | N-CHANNELENHANCEMENTMODEMOSFET Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIACards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101 | ZPSEMI ZP Semiconductor |  | |
DMN100 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：154.39 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | |
DMN100 | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：86.02 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | |
N-CHANNELENHANCEMENTMODEMOSFET Features CSPwithFootprint1.84mm×1.96mm Height=0.30mm(Typical)forLowProfile ESDProtectionofGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol(i. | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features CSPwithFootprint1.84mm×1.96mm Height=0.30mm(Typical)forLowProfile ESDProtectionofGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol(i. | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •CSPwithFootprint3.05mm×1.77mm •Height=0.11mmforLowProfile • | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •CSPwithFootprint3.05mm×1.77mm •Height=0.11mmforLowProfile • | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2 | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2 | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2 | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •CSPwithFootprint2.70mm×1.81mm •Height=0.21mmforLowProfile • | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •CSPwithFootprint2.70mm×1.81mm •Height=0.21mmforLowProfile • | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIA Cards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti | DIODESDiodes Incorporated 达尔科技 | | | |
12VN-CHANNELENHANCEMENTMODEMOSFET Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：154.39 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：86.02 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：106.07 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：490.94 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：490.94 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：154.39 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：86.02 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 |  | | |
1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
TOGGLESWITCHES-MINIATURE 文件：1.55809 Mbytes Page：10 Pages | E-SWITCH E-Switch, Inc. |  | | |
100/200 文件：3.83844 Mbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
DMN100产品属性
- 类型
描述
- 型号
DMN100
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT23 |
45000 |
热卖优势现货 |
|||
DIODES |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
DIODES/美台 |
2102+ |
CSP |
6854 |
只做原厂原装正品假一赔十! |
|||
DIODES/美台 |
22+ |
SOT23 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
|||
DIODES/美台 |
22+ |
CSP-6X4-DSN3118-6) |
12800 |
本公司只做进口原装!优势低价出售! |
|||
DIODES/美台 |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES(美台) |
23+ |
DFN-6(2x2) |
14843 |
支持大陆交货,美金交易。原装现货库存。 |
|||
DIODES |
23+ |
X3-DSN2718 |
161316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
DIODES/美台 |
1936+ |
6852 |
只做原装正品现货或订货!假一赔十! |
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2020-1-9
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