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位置：首页 > IC中文资料第9274页 > DMN100

DMN100价格

参考价格：￥1.1558

型号：DMN100-7-F 品牌：Diodes 备注：这里有DMN100多少钱，2025年最近7天走势，今日出价，今日竞价，DMN100批发/采购报价，DMN100行情走势销售排行榜，DMN100报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DMN100

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIA Cards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100

N-CHANNELENHANCEMENTMODEMOSFET

Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIACards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101

ZPSEMIZP Semiconductor

至尚臻品

ZPSEMI
DMN100

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1001UCA10

N-CHANNELENHANCEMENTMODEMOSFET

Features CSPwithFootprint1.84mm×1.96mm Height=0.30mm(Typical)forLowProfile ESDProtectionofGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol(i.

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1001UCA10-7

N-CHANNELENHANCEMENTMODEMOSFET

Features CSPwithFootprint1.84mm×1.96mm Height=0.30mm(Typical)forLowProfile ESDProtectionofGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol(i.

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1002UCA6

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •CSPwithFootprint3.05mm×1.77mm •Height=0.11mmforLowProfile •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1002UCA6-7

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •CSPwithFootprint3.05mm×1.77mm •Height=0.11mmforLowProfile •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFDF

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFDF-13

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFDF-7

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLow-ProfileApplications •PCBFootprintof4mm2

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFV

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFV-13

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1004UFV-7

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowRDS(ON)–EnsuresOn-StateLossesareMinimized •SmallFormFactorThermallyEffici

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1006UCA6

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •CSPwithFootprint2.70mm×1.81mm •Height=0.21mmforLowProfile •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1006UCA6-7

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RSS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •CSPwithFootprint2.70mm×1.81mm •Height=0.21mmforLowProfile •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •ExtremelyLowOn-Resistance:170mΩ@VGS=4.5V •HighDrainCurrent:1.1A •IdealforNotebookComputer,PortablePhone,PCMCIA Cards,andBatteryPoweredCircuits •ESDProtectedGate •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDF

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDF-13

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDF-7

12VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •0.6mmProfile–IdealforLowProfileApplications •PCBFootprintof4mm2 •LowGat

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDFQ

12VN-CHANNELENHANCEMENTMODEMOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDFQ-13

12VN-CHANNELENHANCEMENTMODEMOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1008UFDFQ-7

12VN-CHANNELENHANCEMENTMODEMOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN1008UFDFQissuitableforautomoti

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100_0711

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100_1

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100_15

N-CHANNELENHANCEMENTMODEMOSFET

文件：106.07 Kbytes Page：4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1003UCA6

N-CHANNELENHANCEMENTMODEMOSFET

文件：490.94 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN1003UCA6-7

N-CHANNELENHANCEMENTMODEMOSFET

文件：490.94 Kbytes Page：7 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：154.39 Kbytes Page：4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN100-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：86.02 Kbytes Page：3 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
100

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

Riedon

Riedon Powertron

Riedon
100

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELL

Productwell Precision Elect.CO.,LTD

PRODUCTWELL
100

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
100

TOGGLESWITCHES-MINIATURE

文件：1.55809 Mbytes Page：10 Pages

E-SWITCH

E-switch

E-SWITCH
100

100/200

文件：3.83844 Mbytes Page：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

DMN100产品属性

  • 类型

    描述

  • 型号

    DMN100

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN100供应商更多...

更新时间：2025-6-2 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
DMN1006UCA6-7
DIODES
24+
X3-DSN2718
150524
原厂直供,支持账期,免费供样,技术支持
询价
深圳市纳艾斯科技有限公司
DMN1003UCA6-7
DIODES
24+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市汇莱威科技有限公司
DMN1008UFDF-7
ZETEX/DIODES
24+
U-DFN2020-6
499932
免费送样原盒原包现货一手渠道联系
询价
深圳市明嘉莱科技有限公司
DMN1001UCA10-7
DIODES/美台
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
DMN1002UCA6-7
DIODES/美台
1936+
6852
只做原装正品现货或订货!假一赔十!
询价
深圳市富利微电子科技有限公司
DMN1002UCA6-7
DIODES/美台
24+
X4-DSN3118-6
25000
原装正品公司现货,假一赔十!
询价
深圳市一线半导体有限公司
DMN100
ON/DIODES/PANJIT
24+
SC59
43000
询价
深圳兆威电子有限公司
DMN100
DIODES/美台
22+
SC59
90000
正规代理渠道假一赔十
询价
深圳市金华微盛电子有限公司
DMN100-7-F
DIODES/美台
2019+
SC59
78550
原厂渠道 可含税出货
询价
深圳市百诺芯科技有限公司
DMN1001UCA10-7
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价

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