LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automated Assembly Processes • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

PNP, 30V, 3A, SOT223

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automated Assembly Processes • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

文件：107.93 Kbytes Page：4 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 30V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages