1310 nm DFB LASER DIODES 2.5 Gb/s MQW-DFB LASER DIODES

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1310 nm DFB LASER DIODES MQW-DFB LASER DIODES

文件：110.94 Kbytes Page：2 Pages

1310 nm DFB LASER DIODES

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Index Guided AlGalnP Laser Diode?

Index Guided AlGalnP Laser Diode

AlGalnP Laser Diode?

Overview DL-3148-023 is 635 nm (Typ.) AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well active layer. The lasing wavelength is 635 nm (Typ.) which is 8 times brighter than that of 670 nm laser

Index Guided AlGalnP Laser Diode?

Overview The DL-3148-033 is index guided 635 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by a strained multiple quantum well active layer. The lasing wavelength is 635nm which is 8 times brigh

Index Guided AlGalnP Laser Diode

Red Laser Diode AlGaInP Laser Diode

Red Laser Diode Index Guided AlGaInP Laser Diode

1310 nm DFB LASER DIODES

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1310 nm DFB LASER DIODES MQW-DFB LASER DIODES

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IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

STANDARD LED LAMPS

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6-/8-/12-Channel DS3/E3 Framers

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