1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes Page：15 Pages

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes Page：15 Pages

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes Page：15 Pages

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes Page：15 Pages

1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches

GENERAL DESCRIPTION The ADG611/ADG612/ADG613 are monolithic CMOS devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pC over the full input signal range and typical leakage currents of 10 pA at 25°C. The devices are fully specified for ±

Low Profile

文件：146.02 Kbytes Page：2 Pages

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes Page：2 Pages

짹150째/sec Yaw Rate Gyroscope

文件：421.26 Kbytes Page：12 Pages