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DG6晶体管资料
DG637别名：DG637三极管、DG637晶体管、DG637晶体三极管
DG637生产厂家：中国大陆半导体企业
DG637制作材料：
DG637性质：射频/高频放大 （HF）_宽频带放大 （A）
DG637封装形式：
DG637极限工作电压：60V
DG637最大电流允许值：0.1A
DG637最大工作频率：<1MHZ或未知
DG637引脚数：
DG637最大耗散功率：0.4W
DG637放大倍数：
DG637图片代号：NO
DG637vtest：60
DG637htest：999900
- DG637atest：.1
DG637wtest：.4
DG637代换 DG637用什么型号代替：
DG6价格
参考价格：￥4.9762
型号：DG604EN-T1-E4 品牌：Vishay 备注：这里有DG6多少钱，2024年最近7天走势，今日出价，今日竞价，DG6批发/采购报价，DG6行情走势销售排行榜，DG6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DG6 | 包装：散装 描述：DIAMOND #6 SPLIT BOT CONNECTOR 电缆，电线 - 管理 电缆支撑与紧固件 | BELDENBelden Inc. 百通电缆设计科技有限公司 |  |   |
1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Ultralowchargeinjection (±1pC,typ.overthefullanalogsignalrange) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Ultralowchargeinjection (±1pC,typ.overthefullanalogsignalrange) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Ultralowchargeinjection (±1pC,typ.overthefullanalogsignalrange) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Ultralowchargeinjection (±1pC,typ.overthefullanalogsignalrange) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •3Vto16Vsinglesupplyor±3Vto±8Vdual supply •Lowchargeinjection(1.4pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High-Speed, Low-Glitch D/CMOS Analog Switches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技威世科技半导体 | | |
DG6产品属性
- 类型
描述
- 型号
DG6
- 制造商
Belden Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
11+ |
SOP-16 |
6000 |
原装正品现货 |
|||
SIL |
22+ |
CDIP |
12245 |
现货,原厂原装假一罚十! |
|||
HAR |
21+ROHS |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INTERSIL |
21+ |
SOP16 |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
VISHAY |
2020+ |
SOP16 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
23+ |
SOP16 |
11750 |
原装优势公司现货! |
|||
AD |
23+ |
DIP |
1153 |
专业优势供应 |
|||
SILICON |
2020+ |
DIP-16 |
120000 |
100%进口原装正品公司现货库存 |
|||
SIL |
2023+ |
CDIP |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
VISHAY/威世 |
22+ |
SOP16 |
9600 |
原装现货,优势供应,支持实单! |
DG6芯片相关品牌
DG6规格书下载地址
DG6参数引脚图相关
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DG6数据表相关新闻
DG75X07T2L
DG75X07T2L
2023-11-22DGD2101MS8-13
DGD2101MS8-13
2023-8-9DGD2184MS8-13
DGD2184MS8-13
2023-7-28DG412DQ-T1-E3 模拟开关 IC
DG412DQ-T1-E3模拟开关ICPMQuadSPSTCMOSAnalogSwitch
2023-3-1DG506AAK
DG506AAK，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-2-25DG456EQ-T1-E3
深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
2019-5-17
DdatasheetPDF页码索引
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