Improved Quad SPST CMOS Analog Switches

DESCRIPTION The DG444B, DG445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B, DG445B are upgrades to the original DG444, DG445. Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG4

Improved Quad SPST CMOS Analog Switches

FEATURES • Low On-Resistance: 45 W • Low Power Consumption: 1 mW • Fast Switching Action - tON: 120 ns • Low Charge Injection • TTL/CMOS-Compatible Logic • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Low Signal Errors and Distor

Improved Quad SPST CMOS Analog Switches

FEATURES • Low On-Resistance: 45 W • Low Power Consumption: 1 mW • Fast Switching Action - tON: 120 ns • Low Charge Injection • TTL/CMOS-Compatible Logic • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Low Signal Errors and Distor

Improved Quad SPST CMOS Analog Switches

文件：243.91 Kbytes Page：15 Pages

Improved Quad SPST CMOS Analog Switches

文件：243.91 Kbytes Page：15 Pages

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications. • Specified 300 Volt, 13.56 MHz Characteristics: • Output Power = 300 Watts. • Gain = 18.7dB (Typ.) • Efficiency = 83 (

High Voltage FET-Input OPERATIONAL AMPLIFIER

文件：131.38 Kbytes Page：11 Pages

High Voltage FET-Input OPERATIONAL AMPLIFIER

文件：131.38 Kbytes Page：11 Pages

High Voltage FET-Input OPERATIONAL AMPLIFIER

文件：131.38 Kbytes Page：11 Pages

High Voltage FET-Input OPERATIONAL AMPLIFIER

文件：131.38 Kbytes Page：11 Pages