16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

16 Ω, Low Charge Injection and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches

16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

16 ?? Low Charge Injection and Leakage, 12 V / 5 V / 3 V / 짹 5 V Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • On-resistance RDS(on): 16  • Fast switching tON: 18 ns,typ. • Low parasitic capacitance: CD(ON): 15 pF CS(OFF): 5 pF • Less than 8 pC charge injection over the full signal swing range • Low leakage:

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

Low Charge Injection and Leakage, Quad SPST Switches

文件：331.67 Kbytes Page：18 Pages

Plastic Medium Power Silicon PNP Transistor

4.0 AMPERES POWER TRANSISTORS PNP SILICON . . . for amplifier and switching applications. Complementary types are BD437 and BD441.

Dual Low Power JFET Input Operational Amplifier

文件：440.89 Kbytes Page：12 Pages

Dual Low Power JFET Input Operational Amplifier

文件：440.89 Kbytes Page：12 Pages

Dual Low Power JFET Input Operational Amplifier

文件：440.89 Kbytes Page：12 Pages

Dual Low Power JFET Input Operational Amplifier

文件：440.89 Kbytes Page：12 Pages