0.25 廓 Low-Voltage Dual SPDT Analog Switch

FEATURES • Low voltage operation • Low on-resistance - RON: 0.25 Ω at 2.7 V • - 69 dB OIRR at 2.7 V, 100 kHz • MICRO FOOT® package • ESD protection > 2000 V • Compliant to RoHS Directive 2002/95/EC BENEFITS • Reduced power consumption • High accuracy • Reduce board space • 1.6 V logic

0.25ohm Low-Voltage Dual SPDT Analog Switch

文件：103.87 Kbytes Page：9 Pages

0.25-OHM Low-Voltage Dual SPDT Analog Switch

0.25-OHM Low-Voltage Dual SPDT Analog Switch

文件：94.37 Kbytes Page：6 Pages

0.25-Ω Low-Voltage Dual SPDT Analog Switch

文件：123.96 Kbytes Page：9 Pages

0.25 廓 Low-Voltage Dual SPDT Analog Switch

FEATURES • Low voltage operation • Low on-resistance - RON: 0.25 Ω at 2.7 V • - 69 dB OIRR at 2.7 V, 100 kHz • MICRO FOOT® package • ESD protection > 2000 V • Compliant to RoHS Directive 2002/95/EC BENEFITS • Reduced power consumption • High accuracy • Reduce board space • 1.6 V logic

0.25 Ω Low-Voltage Dual SPDT Analog Switch

0.25-Ω Low-Voltage Dual SPDT Analog Switch

文件：123.96 Kbytes Page：9 Pages

0.25ohm Low-Voltage Dual SPDT Analog Switch

文件：103.87 Kbytes Page：9 Pages

Device Orientation Options for Analog ICs

文件：19.75 Kbytes Page：1 Pages

0.25-Ω Low-Voltage Dual SPDT Analog Switch

文件：123.96 Kbytes Page：9 Pages

0.25-OHM Low-Voltage Dual SPDT Analog Switch

文件：94.37 Kbytes Page：6 Pages

0.25ohm Low-Voltage Dual SPDT Analog Switch

文件：103.87 Kbytes Page：9 Pages

0.25ohm Low-Voltage Dual SPDT Analog Switch

文件：103.87 Kbytes Page：9 Pages

0.25-OHM Low-Voltage Dual SPDT Analog Switch

文件：94.37 Kbytes Page：6 Pages

0.25-Ω Low-Voltage Dual SPDT Analog Switch

文件：123.96 Kbytes Page：9 Pages

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

3V to 5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with 짹15kV ESD Protection

General Description The MAX3535E/MXL1535E isolated RS-485/RS-422 full duplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor or control logic side. These devices allow fast, 1000kbps communication across an isolation barrier when the common-mod

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

文件：115.54 Kbytes Page：2 Pages

Low power GSM/DCS/PCS multi-band transceiver

文件：118.44 Kbytes Page：24 Pages